Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 497-500

  Saito, T ^a   Xia, J ^a   Kim, R ^a   Aoki, T ^a   Kobayashi, H ^a   Kamakura, Y ^a   Taniguchi, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTOR DOPING;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032284232     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)