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Volumn 258-263, Issue PART 1, 1997, Pages 271-276

Low-temperature migration of hydrogen and interaction with oxygen

Author keywords

Diffusion; Hydrogen; Ion implantation; Oxygen; Silicon

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ELECTRON EMISSION; ENERGY GAP; ION IMPLANTATION; LOW TEMPERATURE PHENOMENA; OXYGEN; PROTONS; SEMICONDUCTING SILICON;

EID: 0542381151     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (3)

References (9)
  • 1
    • 0001633346 scopus 로고
    • Hydrogen in Semiconductors
    • Academic Press, INC., New York
    • J.I. Pankove and N. M. Johnson (editors), Hydrogen in Semiconductors, Semiconductors and Semimetals, Volume 34 (Academic Press, INC., New York, 1991)
    • (1991) Semiconductors and Semimetals , vol.34
    • Pankove, J.I.1    Johnson, N.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.