The importance of inversion-layer capacitance in Si MOSFETs in the ultra-thin gate oxide regime

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 1994, Pages 83-84

  Takagi, S I ^a,b   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85063583764     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.1994.1009425     Document Type: Conference Paper

References (5)

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2. G.Baccarani and M.R. Wordeman: IEEE ED-30 (1983) 1295
3. A.Toriumi, M.Yoshimi, M.Iwase, K Taniguchi and C.Hamaguchi: Surf.Sci. 170(1986)363
4. A.Hartstein and N.F.Albert: Phys.Rev.B38(1988)1235
5. M-S.Liang, J.Y.Choi, P-K.Ko and C.Hu: IEEE ED-33 (1986)409