Band offset calculations applied to III-V nitride quantum well device engineering

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 799-806

  Bhouri, A ^a   Fredj, A Ben ^a   Lazzari, J L ^b   Said, M ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; INFRARED RADIATION; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAVIOLET RADIATION; ZINC;

BAND OFFSET CALCULATIONS; CONDUCTION BAND DISCONTINUITIES; HETEROINTERFACES; QUANTUM WELL DEVICE ENGINEERING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 9944262384     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.036     Document Type: Article

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