Miniband structures and effective masses of n-type δ-doping superlattices in GaN

Semiconductor Science and Technology

Volumn 13, Issue 9, 1998, Pages 981-988

  Rodrigues, S C P ^a   Rosa, A L ^a   Scolfaro, L M R ^a   Beliaev, D ^a   Leite, J R ^a   Enderlein, R ^a   Alves, J L A ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO JOÃO DEL REI   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; FERMI LEVEL; MASS TRANSFER; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; TRANSPORT PROPERTIES;

MINIBAND STRUCTURES; POTENTIAL LINEAR AUGMENTED PLANE WAVE (FLAPW) BAND-STRUCTURES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032156718     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/9/004     Document Type: Article

References (48)

1. Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
2. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H and Sugimoto Y 1996 Japan. J. Appl. Phys. 35 L74
3. Paisley M J, Sitar Z, Posthill J B and Davis R F 1989 J. Vac. Sci. Technol. A7 701
4. Sitar Z, Paisley M J, Ruan J, Choyke J W and Davis R F 1992 J. Mater. Sci. Lett. 11 261
5. Sasaki T and Matsuoka T 1988 J. Appl. Phys. 64 4531
6. Strite S, Ruan J, Li Z, Salvador A, Chen H, Smith D J, Choyke W J and Morkoç H 1991 J. Vac. Sci. Technol. B 9 1924
7. Cheng T S, Jenkins L C, Hooper S E, Foxon C T, Orton J W and Lacklison D E 1995 Appl. Phys. Lett. 66 1509
8. Schikora D, Hankeln M, As D J, Lischka K, Litz T, Waag A, Buhrow T and Henneberger F 1996 Phys. Rev. B 54 R8381
9. See e.g. Edgar J H (ed) 1994 Properties of Group III Nitrides (Datareviews Series) (London: INSPEC) and references therein
10. Strite S and Morkoç H 1992 J. Vac. Sci. Technol. B 10 1237
11. Schubert F Epitaxial Microstructures vol 40, ed A C Gossard 1994 Semiconductors and Semimetals (New York: Academic) p 1
12. Schubert E F 1990 J. Vac. Sci. Technol. A 8 2980
13. Ploog K 1987 J. Cryst. Growth 81 304
14. Malacký L, Kúdela R, Morvic M, Cerniansky M, Peiner E and Wehmann H-H 1996 Appl. Phys. Lett. 69 1731
15. Enderlein R, Scolfaro L M R and Leite J R 1994 Phys. Rev. B 50 8699
16. Scolfaro L M R, Leite J R, Mendonça C A C, Beliaev D, Shibli S M, da Silva E C F and Meneses E A 1994 Mater. Sci. Forum 143-147 669
17. Mendonça C A C, Plentz F, Oliveira J B B, Meneses E A, Scolfaro L M R, Beliaev D, Shibli S M and Leite J R 1993 Phys. Rev. B 48 12 316
18. Degani M H 1991 Phys. Rev. B 44 5580 Degani M H 1991 J. Appl. Phys. 70 4362
19. Degani M H 1991 Phys. Rev. B 44 5580 Degani M H 1991 J. Appl. Phys. 70 4362
20. Sipahi G M, Enderlein R, Scolfaro L M R and Leite J R 1996 Phys. Rev. B 53 9930 Sipahi G M, Enderlein R, Scolfaro L M R, Leite J R, da Silva E C F and Levine A 1998 Phys. Rev. B 57 9168
21. Sipahi G M, Enderlein R, Scolfaro L M R and Leite J R 1996 Phys. Rev. B 53 9930 Sipahi G M, Enderlein R, Scolfaro L M R, Leite J R, da Silva E C F and Levine A 1998 Phys. Rev. B 57 9168
22. Reboredo F A and Proetto C R 1993 Phys. Rev. B 47 4655
23. Scolfaro L M R, Beliaev D, Enderlein R and Leite J R 1994 Phys. Rev. B 50 8699
24. Eisele I 1989 Superlatt. Microstruct. 6 123
25. Zolper J C, Shul R J, Baca A G, Wilson R G, Pearton S J and Stall R A 1996 Appl. Phys. Lett. 68 2273
26. Burm J, Schaff W J, Eastman L F, Amano H, and Akasaki I 1996 Appl. Phys. Lett. 68 2849
27. Majewski J A, Stadele M and Vogl P 1997 Mater. Res. Soc. Symp. Proc. 449 887
28. Hohenberg P and Kohn W 1964 Phys. Rev. B 136 864
29. Kohn W and Sham L J 1965 Phys. Rev. A 140 1133
30. Wimmer E, Krakauer H, Weinert M and Freeman A J 1981 Phys. Rev. B 24 864
31. Wigner E and Seitz F 1933 Phys. Rev. 43 804
32. Slater J C 1934 Phys. Rev. 45 794
33. Leite J R, Bennett B I and Herman F 1975 Phys. Rev. B 12 1466
34. Ferraz A C, Chagas M I T, Takahashi E K and Leite J R 1984 Phys. Rev. B 29 7003
35. Ruden P and Döhler G H 1983 Phys. Rev. B 27 3538
36. Bastard G 1988 Wave Mechanics Applied to Semiconductors in Heterostructures (Courtaboeuf: Les Editions de Physique)
37. Hedin L and Lundqvist J 1971 J. Phys. C: Solid State Phys. 4 2064
38. Wei S H and Zunger A 1991 Appl. Phys. Lett. 58 2684 Wei S H and Zunger A 1994 Phys. Rev. B 49 14 337
39. Wei S H and Zunger A 1991 Appl. Phys. Lett. 58 2684 Wei S H and Zunger A 1994 Phys. Rev. B 49 14 337
40. Ceperley D M and Alder B I 1980 Phys. Rev. Lett. 45 566
41. Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
42. Powell R C, Lee N E, Kim Y W and Greene J E 1993 J. Appl. Phys. 73 189
43. Jhi S-H and Ihm J 1995 Phys. Status Solidi b 191 387
44. Fanciulli M, Lei T and Moustakas T D 1993 Phys. Rev. B 48 15 144
45. Leite J R, Rodrigues S C P, Scolfaro L M R, Enderlein R, Beliaev D and Quivy A A 1995 Mater. Sci. Eng. B 35 250
46. O Madelung (ed) 1982 Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology vol 17 (Berlin: Springer)
47. Esaki L and Tsu R 1970 IBM J. Res. Dev. 14 61
48. Rodrigues S C P, Scolfaro L M R, Enderlein R, Quivy A A, Lima A P, Leite J R, Pusep Yu A, da Silva S W, Silva M T O and Galzerani J C 1996 Proc. 23rd Int. Conf. Phys. Semiconductors (Berlin, 1996) vol 3, ed M Scheffler and R Zimmermann (Singapore: World Scientific) p 2343