Electronic properties of deep defects in n-type GaN

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 435-443

  Muret, P ^a   Ulzhofer Ch ^a   Pernot, J ^a   Cordier, Y ^a   Semond, F ^a   Gacquiere Ch ^a   Theron D ^a  

^a CNRS   (France)

Author keywords

Deep levels; Defects; DLTS; GaN

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ELECTRONIC PROPERTIES; FERMI LEVEL; FOURIER TRANSFORMS; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SAPPHIRE;

ARRHENIUS DIAGRAMS; DEEP LEVELS; GAN; IONIZATION ENERGY;

GALLIUM NITRIDE;

EID: 9944233503     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2004.09.007     Document Type: Article

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