SCOPUS 정보 검색 플랫폼

Volumn , Issue 1, 2002, Pages 61-64

AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances

(18) Cordier, Y a Semond, F a Lorenzini, P a Grandjean, N a Natali, F a Damilano, B a Massies, J a Hoel V a Minko, A b Vellas, N b Gaquiere C b De Jaeger, J C b Dessertene, B c Cassette, S c Surrugue, M c Adam, D c Grattepain, J C c Delage, S L c

a CRHEA CNRS (France)

b INSTITUT D ELECTRONIQUE (France)

c THALES RESEARCH AND TECHNOLOGY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BUFFER LAYERS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITRIDES; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HEMTS; GAN BUFFER LAYERS; GAN FILM; HIGH FREQUENCY PERFORMANCE; RF POWER PERFORMANCE; RF-POWER; SI(111) SUBSTRATE; SUBMICRON GATE;

GALLIUM NITRIDE;

EID: 0041394055 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390117 Document Type: Conference Paper

Times cited : (4)

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