MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 312-319

  Hardtdegen, H ^a   Kaluza, N ^a   Schmidt, R ^a   Steins, R ^a   Yakovlev, E V ^b   Talalaev, R A ^b   Makarov, Yu N ^b   Zettler, J T ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Semiconductor Technology Research GmbH   (Germany)

^c LayTec GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL REACTORS; CRYSTAL GROWTH; CRYSTAL LATTICES; DEPOSITION; ENERGY GAP; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; PYROMETRY; SAPPHIRE; SEPARATION;

BAND GAPS; LATTICE MISMATCH;

GALLIUM NITRIDE;

EID: 1242265291     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303970     Document Type: Conference Paper

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