Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2448-2453

  Carrere H ^a   Arnoult, A ^a   Bedel Pereira, E ^a   Ricard, A ^b  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DETERIORATION; DISSOCIATION; GROUND STATE; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SURFACE TREATMENT;

ELECTRON TEMPERATURE; OPTICAL SPECTROSCOPY; PLASMA CELL; REDIO FREQUENCY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9744279036     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1788681     Document Type: Article

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