High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 32-35

  Monier, C ^a   Sawdai, D ^a   Cavus, A ^a   Sandhu, R ^a   Lange, M ^a   Wang, J ^a   Yamamoto, J ^a   Hsing, R ^a   Hayashi, S ^b   Noori, A ^b   Block, T ^a   Goorsky, M S ^b   Gutierrez Aitken, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; GAIN MEASUREMENT; LATTICE CONSTANTS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; ALUMINUM; ARSENIC COMPOUNDS; BUFFER LAYERS; CRYSTAL LATTICES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HETEROJUNCTIONS; INDIUM; INDIUM COMPOUNDS; INDIUM PHOSPHIDE; MOLECULAR BEAMS; PHOTONIC BAND GAP; SURFACE MORPHOLOGY;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; GRADED BUFFER LAYERS; GUMMEL PLOT; METAMORPHIC TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TECHNOLOGY; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); HIGH INDIUM CONTENTS; INDIUM GALLIUM ARSENIDE; LATTICE-MATCHED; MOLECULAR BEAM EPITAXIAL GROWTH; NARROW BAND GAP; TURN-ON VOLTAGES;

EID: 0038825245     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. S. Maimon, K. L. Averett, X. Wu, M. W. Koch, and G. W. Wicks, "InAs-based heterojunction bipolar transistors", IEE Electron. Lett., vol. 38, pp. 344-346, 2002.
2. P. E. Dodd, M. L. Lovejoy, M. S. Lundstrom, M. R. Melloch, J. M. Woodall, and D. Pettit, "Demonstration of NPN InAs bipolar transistors with inverted base doping", IEEE Electron Dev. Lett., vol. 17, pp. 166-168, 1996
3. S. Thomas, K. Elliott, D. H. Chow, A. Arthur, B. Shi, P. Brewer, and R. Martinez, "Fabrication of InAs-based heterojunction bipolar transistors", Proceedings of the 2002 60th Device Research Conference, (Santa Barbara, CA - June 2002).
4. D. Sawdai, C. Monier, A. Cavus, T. Block, R. Sandhu, M. S. Goorsky, A. Gutierrez-Aitken, J. Woodwall, and G. Wicks, "DC and RF performance of InAs-based bipolar transistors at very low bias", Proceedings of the 2002 IEEE Lester Eastman Conference on High Performance Devices (Delware, August 2002).
5. H. Wang, G. I. Ng, H. Zheng, H. Yang, Y. Xiong, S. Halder, K. Yuan, C. L. Tan, K. Rahdakrishnan, and S. F. Yoon, "Metamorphic InP/InGaAs HBTs on GaAs substrate: DC and microwave performances," IEEE Trans. Electron Dev., vol. 48, pp. 2671-2676, 2001.
6. W. K. Liu, D. Lubyshev, Y. Wu, X.-M. Fang, T. Yurasits, A. B. Cornfeld, D. Mensa, S. Jaganathan, R. Pulella, M. Dahlstrom, P. K. Sundarajan, T. Mathew, and M. Rodwell, "MBE growth of large diameter InP-based lattice-mateched and metamorphic HBTs", Proceedings of the 2001 International Conf. on Indium Phosphide and Related Materials, pp. 284-287, Nara Japan, 14-18 May, 2001.
7. Y. M. Kim, M. Dahlstrom, S. Lee, M. J. W. Rodwell, and A. C. Gossard, "High-Performance InP/InGaAs/InP DHBTs on GaAs substrates," IEEE Electron Dev. Lett., vol. 23, pp. 297-299, 2002.
8. D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, P. C. Grossman, K. Sato, W. Kim, G. Leslie, J. Eldredge, T. Block, P. Chin, L. Tran, A. K. Oki, D. C. Streit, "High Performance, high yield InP DHBT production process for 40 Gbps applications," Proceedings of the 2001 International Conf. on Indium Phosphide and Related Materials, pp. 493-496, Nara, Japan, 14-18 May, 2001.