Resistivity simulation of CZT materials

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 670-674

  Zumbiehl, A ^a   Fougeres, P ^b   Hage Ali, M ^a   Koebel, J M ^a   Siffert, P ^a   Zerrai, A ^c   Cherkaoui, K ^c   Marrakchi, G ^c   Bremond, G ^c  

^a Phase CNRS   (France)

^b EURORAD   (France)

^c INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Band; CZT; Levels; PICTS; Resistivity; Simulation

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; FERMI LEVEL; MATHEMATICAL MODELS; TERNARY SYSTEMS;

FERMI-DIRAC DISTRIBUTIONS; RESISTIVITY SIMULATIONS;

CRYSTAL GROWTH;

EID: 0033514130     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00810-0     Document Type: Article

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