Correlation between the x value and qualities of Cd1-xZn xTe crystal grown by vertical Bridgman method

Materials Science and Engineering: B

Volumn 107, Issue 2, 2004, Pages 172-175

  Li, Guoqiang ^a   Jie, Wanqi ^a   Gu, Zhi ^a   Hua, Hui ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Cadmium zinc telluride; Characterization; Defect formation; Segregation

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; INFRARED TRANSMISSION; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; SOLIDIFICATION; SOLUTIONS;

CADMIUM ZINC TELLURIDE; CHARACTERIZATION METHODS; DEFECT FORMATION;

CADMIUM COMPOUNDS;

EID: 1242300167     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.11.005     Document Type: Article

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