Lithium, sodium, and copper in Hg0.78Cd0.22Te and CdTe-based substrates

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 573-578

  Berding, M A ^a   Sher, A ^a   Van Schilfgaarde, M ^a  

^a SRI INTERNATIONAL   (United States)

Author keywords

Copper; Defects; Doping; HgCdTe; Lithium; Sodium

Indexed keywords

EID: 0002418412     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0017-3     Document Type: Article

References (19)

1. K. Harris, II-VI Corporation, private communication.
2. J.P. Tower, S.P. Tobin, P.W. Norton, A.B. Bollong, A. Socha, J.H. Tregilgas, C. Ard and J.F. Arlinghaus, J. Electron. Mater. 25, 1183 (1996).
3. K.P. Capper, Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series No. 10, ed. P. Capper, (INSPEC, 1994), p. 158 and p. 163, and references therein.
4. L.O. Bubulac, W.E. Tennant, R.A. Riedel, J. Bajaj and D.D. Edwall, J. Vac. Sci. Technol. A 1, 1646 (1983).
5. M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater. 26, 624 (1997).
6. The tellurium vacancy, tellurium interstitial, and the mercury antisite have been previously identified as minority defects for the purpose of establishment of the majority defect equilibrium and have not been included in the present analysis.
7. O.K. Andersen, O. Jepsen and D. Glotzel, Highlights of Condensed Matter Theory, ed. F. Bassani et al. (Amsterdam, The Netherlands: North Holland, 1985), p. 59.
8. U. von Barth and L. Hedin, J. Phys.C 5, 1629 (1972).
9. M. van Schilfgaarde, unpublished.
10. M.A. Berding, A. Sher and M. van Schilfgaarde, Phys. Rev. B 50, 1519 (1994).
11. D. Langreth and D. Mehl, Phys. Rev. B 28, 1809 (1983).
12. M.A. Berding, unpublished.
13. A. Sher, M. van Schilfgaarde, A.-B. Chen and W. Chen, Phys. Rev. B 36, 4279 (1987).
14. We have used a one-electron picture of the ionization states, although the formalism is capable of dealing with negative-U centers.
15. G.L. Hansen, J.L. Schmit and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).
16. The conduction band was fit to a linear dispersion to give agreement with experimental intrinsic carrier concentrations. The conduction bands have a more nearly hyperbolic dispersion near the band edge, but we found that for the purpose of fitting the carrier concentrations, the linear dispersion assumption was adequate.
17. P. Capper, Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series No. 10, ed. P. Capper, (INSPEC, 1994), p. 212.
18. M. G. Astles, Properties of Narrow Gap Cadmium-Based Compounds, EMIS Datareviews Series No. 10, ed. P. Capper, (INSPEC, 1994), p. 13, and references therein.
19. K. Zanio, Semiconductors and Semimetals, Vol. 13, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1978).