Performance study of CdZnTe spectrometers

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 409, Issue 1-3, 1998, Pages 232-235

  Ruzin, A ^a   Nemirovsky, Y ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

CdZnTe; DC current; Models; Spectroscopy

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ENERGY GAP; GAMMA RAY SPECTROMETERS; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SURFACE PHENOMENA; X RAY SPECTROMETERS;

CADMIUM ZINC TELLURIDE; CHARGE COLLECTION EFFICIENCY; NOISE POWER SPECTRAL DENSITY;

SEMICONDUCTOR DEVICES;

EID: 0032068473     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01268-0     Document Type: Article

References (4)

1. A. Ruzin, D.Sc. Thesis, X and gamma rays sensors in II-VI group materials, 1992-1996.
2. A. Ruzin, Y. Nemirovsky, Statistical models for charge collection efficiency and variance in semiconductor spectrometers, J. Appl. Phys., to be published.
3. A. Ruzin, Y. Nemirovsky, Methodology for evaluation of mobility-lifetime product by spectroscopy measurements in CdZnTe spectrometers, J. Appl. Phys., to be published.
4. A. Ruzin, Y. Nemirovsky, Passivation and surface leakage in CdZnTe spectrometers, Appl. Phys. Lett., to be published.