Fast growth of polycrystalline film in SiCl4/H2 plasma

Chinese Physics Letters

Volumn 21, Issue 6, 2004, Pages 1168-1170

  Huang, Rui ^a   Lin, Xuan Ying ^a   Yu, Yun Peng ^a   Lin, Kui Xun ^a   Wei, Jun Hong ^a   Yu, Chu Ying ^a   Wang, Zhao Kui ^a  

^a SHANTOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CRYSTALLITE SIZE; DEPOSITION RATES; FILM GROWTH; GASES; METALLIC FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SUBSTRATES; TEMPERATURE;

CRYSTALLINE FRACTIONS; FAST GROWTHS; FLOW RATIOS; LOWS-TEMPERATURES; MIXTURE GAS; POLYCRYSTALLINE FILM; POLYCRYSTALLINE SILICON FILMS; RF POWER; RF-POWER; SUBSTRATES TEMPERATURE;

PHASE INTERFACES;

EID: 9644309178     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/6/053     Document Type: Article

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