Formation of self-assembled nanocrystalline silicon dots by SiCl4/H2 RF plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 B, 2001, Pages

  Fujimura, Yukihiro ^a   Jung, Sughoan ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

AFM; Nanocrystal Si dot; RF plasma; Self assemble; SiCl4

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHLORINE; HYDROGEN; LOW TEMPERATURE PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE; SELF ASSEMBLY; SILICON; SURFACES;

CHEMICAL STABILITY; HYDROGEN PLASMA; PULSE DUTY RATIO; SELF ASSEMBLED NANOCRYSTALLINE SILICON DOTS; TETRACHLOROSILANE;

NANOSTRUCTURED MATERIALS;

EID: 0035891920     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1214     Document Type: Letter

References (11)