Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 987-990

  Ikeda, Toru ^a,b   Osborne, Ian S ^b,c   Hata, Nobuhiro ^b   Matsuda, Akihisa ^b  

^a ASAHI GLASS CO LTD   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRONIC PROPERTIES; ELECTRONS; EMISSION SPECTROSCOPY; FILM GROWTH; IONS; MIXTURES; OPTICAL PROPERTIES; SILANES; TEMPERATURE;

DICHLOROSILANE; GAS PHASE PROCESSES; HYDROGENATED AMORPHOUS SILICON; PLASMA CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 0030563366     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00016-6     Document Type: Article

References (6)

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4. I.S. Osborne, N. Hata and A. Matsuda, Appl. Phys. Lett. 66 (1995) 965.
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6. I.S. Osborne, N. Hata and A. Matsuda, Jpn. J. Appl. Phys. 34 (1995) L536.