Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 47-51

  Spiga, S ^a   Wiemer, C ^a   Tallarida, G ^a   Fanciulli, M ^a   Malvestuto, M ^b   Boscherini, F ^b   D'Acapito, F ^c   Dimoulas, A ^d   Vellianitis, G ^d   Mavrou, G ^d  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

High k; Interface; XAS; Y2O3

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; OXIDES; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SILICA; THICKNESS CONTROL; THIN FILMS; ULTRATHIN FILMS; X RAY SPECTROSCOPY; YTTERBIUM COMPOUNDS;

GRAZING INCIDENT GEOMETRY; HIGH-K; INTERFACE; XAS;

INTERFACES (MATERIALS);

EID: 2342612871     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.025     Document Type: Conference Paper

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