Effects of SiO2 overlayer at initial growth stage of epitaxial Y2O3 film growth

Journal of Crystal Growth

Volumn 220, Issue 4, 2000, Pages 501-509

  Cho, M H ^a   Ko, D H ^a   Choi, Y G ^a   Lyo, I W ^a   Jeong, K ^a   Whang, C N ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICA; X RAY SCATTERING; YTTRIUM COMPOUNDS;

HINDER CRYSTAL GROWTH;

METALLIC FILMS;

EID: 0034516044     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00835-6     Document Type: Article

References (16)

1. Manchanda L., Gurvitch M. IEEE Electron Device Lett. 9:1988;180.
2. C. Hu, IEDM Technical Digest, IEEE, New York, 1985, p. 368.
3. Harada K., Nakanishi H., Itozaki H., Yazu S. Jpn. J. Appl. Phys. 60:1991;934.
4. Fork D.K., Fenner D.B., Geballe T.H. J. Appl. Phys. 68:1990;4316.
5. Inoue T., Yamamoto Y., Koyama S., Suzuki S., Ueda Y. Appl. Phys. Lett. 56:1990;1332.
6. D.K. Fork, D.B. Fenner, G.A. Connell, Julia M. Phillips, T.H. Gabelle, Appl. Phys. Lett. 57 (1990) 1137.
7. Leganeux P., Garry G., Dieumegard D., Schwebel C., Pellet C., Gautherin G., Siejka J. Appl. Phys. Lett. 53:1988;1506.
8. Samsonov G.V. The Oxide Handbook. 1982;IFI/Plenum Data Company, New York.
9. Matthee Th., Wecker J., Behner H., Friedl G., Eible O., Samwer K. Appl. Phys. Lett. 61:1992;1240.
10. Gurvitch M., Manchanda L., Gibson J.M. Appl. Phys. Lett. 51:1987;919.
11. Fukumoto H., Imura T., Osaka Y. Appl. Phys. Lett. 55:1989;360.
12. Choi S.C., Cho M.H., Whangbo S.W., Whang C.N., Kang S.B., Lee S.I., Lee M.Y. Appl. Phys. Lett. 71:1997;903.
13. Knapp J.A., Picraux S.T. Appl. Phys. Lett. 48:1986;466.
14. Cho M.-H., Ko D.-H., Jeong K., Whangbo S.W., Whang C.N., Choi S.C., Cho S.J. Appl. Phys. 85:1999;2909.
15. Kern W. RCA Rev. 31:1970;207.
16. Kern W. RCA Rev. 31:1970;234.