Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

Thin Solid Films

Volumn 422, Issue 1-2, 2002, Pages 150-154

  Lim, Dong Gun ^a   Kwak, Dong Joo ^b   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

^b Kyungsung University   (South Korea)

Author keywords

Buffer layer; Ferroelectric random access memory; Interface; Yttrium oxide

Indexed keywords

ANNEALING; CRYSTAL LATTICES; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

CAPACITANCE REDUCTION;

THIN FILMS;

EID: 0037147326     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00846-5     Document Type: Article

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