Characterizations of cubic ZnMgO films grown on Si(111) at low substrate temperature

Chinese Physics Letters

Volumn 20, Issue 4, 2003, Pages 582-584

  Qiu, Dong Jiang ^a   Wu, Hui Zhen ^a,b   Chen, Nai Bo ^a   Xu, Tian Ning ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS); MAGNESIA; MAGNESIUM; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

LOW SUBSTRATE TEMPERATURE; MG CONTENT; REACTIVE ELECTRON BEAM EVAPORATION; SECONDARY ION MASS SPECTROSCOPY; SI SUBSTRATES; SI(111) SUBSTRATE; SPECTROSCOPY MEASUREMENTS; THIN-FILMS; TRANSMISSION SPECTRUMS; [100] ORIENTATION;

II-VI SEMICONDUCTORS;

EID: 0038713455     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/4/341     Document Type: Article

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