Fabrication and characterization of the pentacene thin film transistor with a Gd2O3 gate insulator

Synthetic Metals

Volumn 146, Issue 3, 2004, Pages 351-354

  Kang, S J ^a   Chung, K B ^a   Park, D S ^a   Kim, H J ^a   Choi, Y K ^a   Jang, M H ^a   Noh, M ^a   Whang, C N ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATORS; GADOLINIUM COMPOUNDS; GATES (TRANSISTOR); ION BEAM ASSISTED DEPOSITION; PERMITTIVITY; SUBSTRATES; THRESHOLD VOLTAGE; VACUUM;

FIELD EFFECT MOBILITY; GATE INSULATORS; ORGANIC DIELECTRICS; PENTACENE;

THIN FILM TRANSISTORS;

EID: 9344242429     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.08.021     Document Type: Conference Paper

References (25)

1. J.M. Shaw, F.F. Seidler, IBM J. RES & DEV. 45 (2001) 3.
2. C.D. Dimitrakopoulos, D.J. Mascaro, IBM J. RES & DEV. 45 (2001) 11.
3. D. Knipp, R.A. Street, A. Volkel, J. Ho, J. Appl. Physiol. 93 (2003) 347.
4. Y.Y. Lin, D.J. Gundlach, S.F. Nelson, T.N. Jackson, IEEE Electron Device Lett. 18 (1997) 606.
5. M. Shtein, J. Mapel, J.B. Benziger, S.R. Forrest, Appl. Phys. Lett. 81 (2002) 268.
6. C.K. Song, B.W. Koo, S.B. Lee, D.H. Kim, Jpn. J. Appl. Phys., Part I 41 (2002) 2730.
7. S.J. Kang, M. Noh, D.S. Park, H.J. Kim, C.N. Whang, C.H. Chang, J. Appl. Physiol. 95 (2004) 2293.
8. T.W. Kelly, et al., MRS Symp. Proc. 771 (1999) 169.
9. C.D. Dimitrakopoulos, A.R. Brown, A. Pomp, J. Appl. Physiol. 80 (1996) 2501.
10. D.J. Gundlach, Y.Y. Lin, T.N. Jackson, S.F. Nelson, D.G. Schlom, IEEE Electron Device Lett. 18 (1997) 87.
11. J. Lee, J.H. Kim, S. Im, Appl. Phys. Lett. 83 (2003) 2689.
12. M.H. Choo, W.S. Hong, S. Im, Thin Solid Films 420-421 (2002) 492.
13. E. Becker, R. Parashkov, G. Ginev, D. Schneider, S. Hartmann, F. Brunetti, T. Dobbertin, D. Metzdorf, T. Riedl, H.H. Johannes, W. Kowalsky, Appl. Phys. Lett. 83 (2003) 4044.
14. T. Yasuda, K. Fujita, H. Nakashima, T. Tsutsui, Jpn. J. Appl. Phys., Part I 42 (2003) 6614.
15. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, W. Weber, J. Appl. Phys. 92 (2002) 5259.
16. W. Keren, RCA Rev. 31 (1970) 207.
17. W. Keren, RCA Rev. 31 (1970) 235.
18. J.W. Johnson, B. Luo, F. Ren, B.P. Gila, W. Krishnamoorthy, C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee, C.C. Chuo, Appl. Phys. Lett. 77 (2000) 3230.
19. J.W. Johnson, B.P. Gila, B. Luo, K.P. Lee, C.R. Abernathy, S.J. Pearton, J.I. Chyi, T.E. Nee, C.M. Lee, C.C. Chuo, F. Ren, J. Electrochem. Soc. 148 (2001) G303.
20. S. J. Kang, D. S. Park, M. Noh, C. N. Whang, Korean Physics Society Conference, 406 (2002).
21. R.W.G. Wyckoff, Crystal Structures, 2nd ed. (Interscience, New York 1971), Vol. 6, Part 2, p. 519.
22. R.B. Campbell, J. Monteath Robertson, J. Trotter, Acta Crystallogr. 14 (1961) 705.
23. G. Horowitz, Adv. Mater. 10 (1998) 365.
24. D.A. Neamen, Semiconductor Physics & Devices, 2nd edn., Irwin McGraw-Hill, New York, 1997.
25. D.J. Gundlach, H. Klauk, C. D. Sheraw, C. Kuo, J. Huang and T. N. Jackson, 1999 IEDM Tech. Digest 111 (1999).