Organic Field-Effect Transistors with Gate Dielectric Films of Poly-p-Xylylene Derivatives Prepared by Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6614-6618

  Yasuda, Takeshi ^a   Fujita, Katsuhiko ^a   Nakashima, Hiroshi ^a   Tsutsui, Tetsuo ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Dielectric; Organic field effect transistor; Organic semiconductor; Poly p xylylene

Indexed keywords

AMORPHOUS MATERIALS; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CONTACT ANGLE; CRYSTAL GROWTH; DERIVATIVES; DIELECTRIC FILMS; ELECTRIC CURRENTS; HYDROPHOBICITY; ORGANIC SOLVENTS; PERMITTIVITY; POLYMERIZATION; POLYMERS; PYROLYSIS; SPIN COATING; SURFACE ROUGHNESS;

FIELD EFFECT MOBILITY; INTERFACIAL PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 0347589749     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6614     Document Type: Article

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