Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 303-309

  Tsai, Ming Kwen ^a   Tan, Shih Wei ^b   Wu, Yen Wei ^b   Yang, Ying Jay ^a   Lour, Wen Shiung ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

Digital graded superlattice (DGSL); Hetero junction bipolar transistor (HBT); Offset voltage; Potential spike; Transfer matrix method; Wet oxidation

Indexed keywords

BOUNDARY CONDITIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SUPERLATTICES;

DIGITAL-GRADED SUPERLATTICES (DGSL);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038057371     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808428     Document Type: Article

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