A comparative study of strain relaxation effects on the performance of InGaAs quantum-well-based heteroi unction phototransistors

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 768-779

  Ghisoni, M ^b   Sjolund O ^a,b   Larsson, A ^a,b   Thordson, J ^b   Andersson, T ^b   Wang, S M ^b   Hart, L ^c  

^a IEEE

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Phototransistors; Quantum well devices; Strain

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; LIGHT ABSORPTION; PHOTODETECTORS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES;

HETEROJUNCTION PHOTOTRANSISTORS (HPT); STRAIN RELAXATION;

PHOTOTRANSISTORS;

EID: 0031152646     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640631     Document Type: Review

References (37)

1. J. C. Campbell, "Phototransistors for lightwave communications," Semiconductors and Semimetals, vol. 22, pt. D, ch. 5, pp. 389-447.
2. C. Amano, S. Matsou, and T. Kurokawa, "Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors: Exciton absorptive reflection switch," IEEE Photon. Technol. Lett., vol. 3, pp. 736-738, 1991.
3. M. Yamaguchi, T. Yamamoto, K.-I. Yukimatsu, S. Matsou, C. Amano, Y. Nakano, and T. Kurokawa, "Experimental investigation of a digital free-space photonic switch that uses exciton absorption reflection switch arrays," Appl. Opt., vol. 33, pp. 1337-1344, 1994.
4. C. W. Wilmsen, F. R. Beyette, Jr., X. An, S. A. Feld, and K. M. Geib, "Smart pixels using the light amplifying optical switch (LAOS)," IEEE J. Quantum Electron., vol. 29, pp. 769-774, 1993.
5. G. R. Olbright, R. P. Bryan, K. Lear, T. M. Brennan, G. Poirer, Y. H. Lee, and J. L. Jewell "Cascadable laser logic devices: Discrete integration of phototransistors with surface-emitting laser diodes," Electron. Lett., vol. 27, pp. 216-217, 1991.
6. J. A. Lott, H.-K. Shin, and Y.-H. Lee, "Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control," in IEEE Int. Semiconductor Laser Conf. Dig., 1996, pp. 185-186.
7. J. Cheng, P. Zhou, S. Z. Sun, S. Hersee, D. R. Myers, J. Zolper, and G. A. Vawter, "Surface-emitting laser-based smart pixels for two-dimensional optical logic and reconfigurable optical interconnections," IEEE J. Quantum Electron., vol. 29, pp. 741-756, 1993.
8. B. Lu, P. Zhou, Y.-C. Lu, J. Cheng, R. E. Leibenguth, A. C. Adams, J. L. Zilko, J. C. Zolper, K. L. Lear, S. A. Chalmers, and G. A. Vawter, "Reconfigurable binary optical routing switches with fan out based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors," IEEE Photon. Technol. Lett., vol. 6, pp. 222-226, 1994.
9. P. A. Mitkas, L. J. Irakliotis, F. R. Beyette, Jr., S. A. Feld, and C. W Wilmsen, "Optoelectronic data filter for selection and projection," Appl. Opt., vol. 33, pp. 1345-1353, 1994.
10. N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, R. L. Naone, J. E. Bowers, and E. L. Hu, "Submilliamp long wavelength vertical cavity lasers," Electron. Lett., vol. 32, pp. 1675-1677, 1996.
11. R. A. Morgan, M. K. Hibbs-Brenner, R. A. Walterson, T. M. Marta, S. Bounnak, E. L. Kalweit, T. Akinwande, and J. C. Nohava, "Producible GaAs-bascd MOVPE-grown vertical-cavity top-surface emitting lasers with record performance," Electron. Lett., vol. 31, pp. 462-464, 1995.
12. B. Weigl, G. Reiner, M. Grabherr, and K. J Ebeling, "Oxidized GaAs QW vertical-cavity lasers with 40% power conversion efficiency," Electron. Lett., vol. 32, pp. 1784-1786, 1996.
13. 0.8As MQW verticalcavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 29, pp. 2977-2987, 1993.
14. B. Weigl, G. Reiner, M. Grabherr, and K. J. Ebeling, "High efficiency selectively oxidized MBE grown vertical-cavity surface-emitting lasers," Electron. Lett., vol. 32, pp. 557-558, 1996.
15. J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
16. M. S. ÜnlÜ, K. Kishino, J.-I. Chyi, L. Arsenault, J. Reed, S. Noor Mohammed, and H. Morko, "Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector," Appl. Phys. Lett., vol. 57, pp. 750-752, 1990.
17. R. P. Bryan, G. R. Olbright, W. S. Fu, T. M. Brennan, and J. Y. Tsao, "Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorption," Appl. Phys. Lett., vol. 59, pp. 1600-1602, 1991.
18. H. Kosaka, I. Ogura, H. Saito, M. Sugimoto, K. Kurihara, T. Numai, and K. Kasahara, "Pixels consisting of a single vertical-cavity laser thyristor and a double vertical-cavity phototransistor," IEEE Photon. Technol. Lett., vol. 5, pp. 1409-1411, 1993.
19. O. Sjölund and A. Larsson, "Uniform arrays of resonant cavity enhanced InGaAs-AlGaAs heterojunction phototransistors," IEEE Photon. Technol. Lett., vol. 7, pp. 682-684, 1995.
20. O. Sjölund, M. Ghisoni, and A. Larsson, "High gain resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistor resonant at 930 nm," Electron. Lett., vol. 31, pp. 917-918, 1995.
21. _, "Resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistors with an optical design for high uniformity and yield," IEEE J. Quantum Electron., Oct. 1996, submitted.
22. 0.8As/GaAs multiple quantum wells," Appl. Phys. Lett., vol. 63, pp. 2920-2922, 1993.
23. M. Ghisoni, G. Parry, L. Hart, C. Roberts, A. Marinopoulou, and P. N. Stavrinou, "Effect of well/barrier ratio on the performance of strained InGaAs/GaAs quantum well modulators," Electron. Lett., vol. 30, pp. 2067-2069, 1994.
24. G. J. Sullivan, P. M. Asbeck, M. F. Chang, D. L. Miller, and K. C. Wang, "AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy," Electron. Lett., vol. 22, pp. 419-421, 1986.
25. L. P. Ramberg, P. M. Enquist, Y.-K. Chen, F. E. Najjar, L. F. Eastman, B. A. Fitzgerald, and K. L. Kavanagh, "Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance," J. Appl. Phys., vol. 61, pp. 1234-1236, 1987.
26. Y. Ashizawa, S. Akbar, W. J. Schaff, L. F. Eastman, E. A. Fitzgerald, and D. G. Ast, "Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases," J. Appl. Phys., vol. 64, pp. 4065-4074, 1988.
27. O. Sjölund, M. Ghisoni, A. Larsson, J. Thordson, and T. Andersson, "Partially relaxed multiple quantum well InGaAs/AlGaAs heterojunction phototransistor operating at 955-970 nm," Electron. Lett., vol. 31, pp. 1870-1871, 1995.
28. M. Ghisoni, O. Sjölund, A. Larsson, and S. M. Wang, "Comparison of partially relaxed InGaAs/GaAs based high performance phototransistors," Appl. Phys. Lett., vol. 69, pp. 1773-1775, 1996.
29. N. Chand, P. A. Houston, and P. N. Robson, "Gain of a heterojunction bipolar phototransistor," IEEE Trans. Electron Devices, vol. ED-32, pp. 622-627, 1985.
30. L. Hart, M. Ghisoni, P. Stavrinou, C. Roberts, and G. Parry, "X-ray characterization of InGaAs/AlAs multiple quantum well p-i-n structures," Mater. Sci. Technol., vol. 11, pp. 50-53, 1995.
31. P. L. Fewster and C. J. Curling, "Composition and lattice-mismatch measurement of thin semiconductor layers by X-ray diffraction," J. Appl. Phys., vol. 62, pp. 4154-4158, 1987.
32. J. P. R. David, Y. H. Chen, R. Grey, G. Hill, P. N. Robson, and P. Kightley, "Effect of misfit dislocations on leakage currents in strained multiquantum well structures," Appl. Phys. Lett., vol. 67, pp. 906-908, 1995.
33. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric field dependence of optical absorption near the band gap of quantum well structures," Phys. Rev. B., vol. 32, pp. 1043-1060, 1985.
34. "Properties of gallium arsenide," EMIS Data Reviews Series, no. 2. London: INSPEC, 1986.
35. S. Adachi, Ed., "Properties of aluminum gallium arsenide," in EMIS Data Reviews Series. London: IEE, 1993, no. 7.
36. H. T. Lin, D. H. Rich, O. Sjölund, M. Ghisoni, and A. Larsson, "Cathodoluminescence study of the influence of misfit dislocations on hole accumulation in an n-AlGaAs/p-GaAs/n-InGaAs heterojunction phototransistor," Appl. Phys. Lett., vol. 69, pp. 1602-1604, 1996.
37. 0.8As/GaAs multiple quantum wells on patterned and unpattemed substrates: A near-infrared Cathodoluminescence study," J. Vac. Sci. Technol. B, vol. 4, pp. 1965-1970, 1992.