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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 687-690

Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination

(7) Sheridan, D C a Merrett, J N b Cressler, J D a Saddow, S E c Williams, J R b Ellis, C E a Niu, G a

a AUBURN UNIVERSITY (United States)

b AUBURN UNIVERSITY (United States)

c MISSISSIPPI STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC RECTIFIERS; ELECTRIC SHIELDING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

EDGE TERMINATION; GUARD RING; MULTIPLE FLOATING GUARD RING TERMINATION; SCHOTTKY INTERFACE; SIMPLIFIED SELF ALIGNED PROCESS SEQUENCE; VOLTAGE DROP;

SCHOTTKY BARRIER DIODES;

EID: 0035127383 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.687 Document Type: Article

Times cited : (5)

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