Hall scattering factor and electron mobility of 4H SiC: Measurements and numerical simulation

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Rutsch, G ^a   Devaty, R P ^a   Choyke, W J ^a   Langer, D W ^b   Rowland, L B ^c   Niemann, E ^d   Wischmeyer, F ^d  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b University of Pittsburgh   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER MOBILITY; COMPUTER SIMULATION; HALL EFFECT; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; PHONONS; SILICON CARBIDE;

HALL SCATTERING FACTOR; RELAXATION TIME APPROXIMATION;

SEMICONDUCTING FILMS;

EID: 0033698903     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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