-
4
-
-
85060999879
-
DRAM variable retention time
-
December
-
"DRAM Variable Retention Time", P. Restle, J. Park, and B. Lloyd, International Electron Devices Meeting (IEDM'92) Technical Digest, December 1992, p. 807.
-
(1992)
International Electron Devices Meeting (IEDM'92) Technical Digest
, pp. 807
-
-
Restle, P.1
Park, J.2
Lloyd, B.3
-
5
-
-
0031672301
-
A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics
-
January
-
"A Numerical Analysis of the Storage Times of Dynamic Random-Access Memory Cells Incorporating Ultrathin Dielectrics", Alex Romanenko and W. Milton Gosney, IEEE Transactions on Electron Devices, Vol. 45, No. 1 (January 1998), p. 218.
-
(1998)
IEEE Transactions on Electron Devices
, vol.45
, Issue.1
, pp. 218
-
-
Romanenko, A.1
Milton Gosney, W.2
-
6
-
-
0024479923
-
Advanced cell structures for dynamic RAMs
-
January
-
"Advanced Cell Structures for Dynamic RAMs", Nicky Lu, IEEE Circuits and Devices Magazine, Vol. 5, No. 1 (January 1989), p. 27.
-
(1989)
IEEE Circuits and Devices Magazine
, vol.5
, Issue.1
, pp. 27
-
-
Lu, N.1
-
7
-
-
0032028617
-
DRAM technology perspective for gigabit era
-
March
-
"DRAM Technology Perspective for Gigabit Era", Kinam Kim, Chang-Gyu Hwang, and Jong Gil Lee, IEEE Transactions on Electron Devices, Vol. 45, No. 3 (March 1998), p. 598.
-
(1998)
IEEE Transactions on Electron Devices
, vol.45
, Issue.3
, pp. 598
-
-
Kim, K.1
Hwang, C.-G.2
Lee, J.G.3
-
9
-
-
36449008541
-
In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects
-
1 October
-
"In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects", K. Lee, C. Hu, and K. Tu, Journal of Applied Physics, Vol. 78, No. 7 (1 October 1995), p. 4428.
-
(1995)
Journal of Applied Physics
, vol.78
, Issue.7
, pp. 4428
-
-
Lee, K.1
Hu, C.2
Tu, K.3
-
10
-
-
1842617942
-
Electromigration in metals
-
"Electromigration in Metals", Paul Ho and Thomas Kwok, Reports on Progress in Physics, Vol. 52, Part 1 (1989), p. 301.
-
(1989)
Reports on Progress in Physics
, vol.52
, pp. 301
-
-
Ho, P.1
Kwok, T.2
-
11
-
-
0347077990
-
Theoretical and experimental study of electromigration
-
John Wiley and Sons
-
"Theoretical and Experimental Study of Electromigration", Jian Zhao, "Electromigration and Electronic Device Degradation", John Wiley and Sons, 1994, p. 167.
-
(1994)
Electromigration and Electronic Device Degradation
, pp. 167
-
-
Zhao, J.1
-
12
-
-
0001438054
-
On the unusual electromigration behaviour of copper interconnects
-
1 October
-
"On the unusual electromigration behaviour of copper interconnects", E. Glickman and M. Nathan, Journal of Applied Physics, Vol. 80, No. 7 (1 October 1996), p. 3782.
-
(1996)
Journal of Applied Physics
, vol.80
, Issue.7
, pp. 3782
-
-
Glickman, E.1
Nathan, M.2
-
13
-
-
0032670034
-
Surface electromigration in copper interconnects
-
March
-
"Surface Electromigration in Copper Interconnects", N. McCusker, H. Gamble, and B. Armstrong, Proceedings of the International Reliability Physics Symposium (IRPS 1999), March 1999, p. 270.
-
(1999)
Proceedings of the International Reliability Physics Symposium (IRPS 1999)
, pp. 270
-
-
McCusker, N.1
Gamble, H.2
Armstrong, B.3
-
15
-
-
0026203342
-
Dynamic degradation in MOSFET's - Part I: The physical effects
-
August
-
"Dynamic Degradation in MOSFET's - Part I: The Physical Effects", Martin Brox and Werner Weber, IEEE Transactions on Electron Devices, Vol. 38, No. 8 (August 1991), p. 1852.
-
(1991)
IEEE Transactions on Electron Devices
, vol.38
, Issue.8
, pp. 1852
-
-
Brox, M.1
Weber, W.2
-
16
-
-
0029305424
-
Data storage in NOS: Lifetime and carrier-to-noise measurements
-
May
-
"Data Storage in NOS: Lifetime and Carrier-to-Noise Measurements", Bruce Terris and Robert Barrett, IEEE Transactions on Electron Devices, Vol. 42, No. 5 (May 1995), p. 944.
-
(1995)
IEEE Transactions on Electron Devices
, vol.42
, Issue.5
, pp. 944
-
-
Terris, B.1
Barrett, R.2
-
17
-
-
0029229817
-
How do hot carriers degrade N-channel MOSFETs?
-
January
-
"How do Hot Carriers Degrade N-Channel MOSFETs?", Kaizad Mistry and Brian Doyle, IEEE Circuits and Devices, Vol. 11, No. 1 (January 1995), p. 28.
-
(1995)
IEEE Circuits and Devices
, vol.11
, Issue.1
, pp. 28
-
-
Mistry, K.1
Doyle, B.2
-
18
-
-
0033282295
-
Hot-carrier damage in AC-stressed deep submicrometer CMOS technologies
-
October
-
"Hot-carrier Damage in AC-Stressed Deep Submicrometer CMOS Technologies", A. Bravaix, D. Doguenheim, N. Revil, and E. Vincent, IEEE Integrated Reliability Workshop (IRW'99) Final Report, October 1999, p. 61.
-
(1999)
IEEE Integrated Reliability Workshop (IRW'99) Final Report
, pp. 61
-
-
Bravaix, A.1
Doguenheim, D.2
Revil, N.3
Vincent, E.4
-
19
-
-
0004916580
-
Hot-carrier degradation evolution in deep submicrometer CMOS technologies
-
October
-
"Hot-carrier Degradation Evolution in Deep Submicrometer CMOS Technologies", A. Bravaix, IEEE Integrated Reliability Workshop (IRW'99) Final Report, October 1999, p. 174.
-
(1999)
IEEE Integrated Reliability Workshop (IRW'99) Final Report
, pp. 174
-
-
Bravaix, A.1
-
20
-
-
0025637485
-
Reduction of signal voltage of DRAM cell induced by discharge of trapped charges in nano-meter thick dual dielectric film
-
April
-
"Reduction of Signal Voltage of DRAM Cell Induced by Discharge of Trapped Charges in Nano-meter Thick Dual Dielectric Film", J. Kumagai, K. Toita, S. Kaki, and S. Sawada, Proceedings of the International Reliability Physics Symposium (IRPS 1990), April 1990, p. 170.
-
(1990)
Proceedings of the International Reliability Physics Symposium (IRPS 1990)
, pp. 170
-
-
Kumagai, J.1
Toita, K.2
Kaki, S.3
Sawada, S.4
-
21
-
-
0025578299
-
Extended (1.1-2.9eV) hot-carrier induced photon emission in n-channel MOSFETs
-
December
-
"Extended (1.1-2.9eV) Hot-Carrier Induced Photon Emission in n-Channel MOSFETs", M. Lanzoni, E. Sangiorgi, C. Fiegna, and B. Riccò, International Electron Devices Meeting (IEDM'90) Technical Digest, December 1990, p. 69.
-
(1990)
International Electron Devices Meeting (IEDM'90) Technical Digest
, pp. 69
-
-
Lanzoni, M.1
Sangiorgi, E.2
Fiegna, C.3
Riccò, B.4
-
22
-
-
0001595119
-
Time-resolved optical characterisation of electrical activity in integrated circuits
-
September
-
"Time-Resolved Optical Characterisation of Electrical Activity in Integrated Circuits", James Tsang, Jeffrey Kash, and David Vallett, Proceedings of the IEEE, Vol. 88, No. 9 (September 2000), p. 1440.
-
(2000)
Proceedings of the IEEE
, vol.88
, Issue.9
, pp. 1440
-
-
Tsang, J.1
Kash, J.2
Vallett, D.3
-
23
-
-
0029345745
-
Setting the trap for hot carriers
-
July
-
"Setting the Trap for Hot Carriers", Shian Aur, Charvaka Duvvury, and William Hunter, IEEE Circuits and Devices, Vol. 11, No. 4 (July 1995), p. 18.
-
(1995)
IEEE Circuits and Devices
, vol.11
, Issue.4
, pp. 18
-
-
Aur, S.1
Duvvury, C.2
Hunter, W.3
-
24
-
-
0030189168
-
Design considerations for CMOS digital circuits with improved hot-carrier reliability
-
July
-
"Design Considerations for CMOS Digital Circuits with Improved Hot-Carrier Reliability", Yusuf Leblebici, IEEE Journal of Solid-state Circuits, Vol. 31, No. 7 (July 1996), p. 1014.
-
(1996)
IEEE Journal of Solid-state Circuits
, vol.31
, Issue.7
, pp. 1014
-
-
Leblebici, Y.1
-
25
-
-
0032204017
-
Hot-carrier-induced alterations of MOSFET capacitances: A quantitative monitor for electrical degradation
-
November
-
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation", David Esseni, Augusto Pieracci, Manrico Quadrelli, and Bruno Riccò, IEEE Transactions on Electron Devices, Vol. 45, No. 11 (November 1998), p. 2319.
-
(1998)
IEEE Transactions on Electron Devices
, vol.45
, Issue.11
, pp. 2319
-
-
Esseni, D.1
Pieracci, A.2
Quadrelli, M.3
Riccò, B.4
-
26
-
-
0011184135
-
Mobile ion effects in low-temperature silicon oxides
-
1 July
-
"Mobile ion effects in low-temperature silicon oxides", N. Young, A. Gill, and I. Clarence, Journal of Applied Physics, Vol. 66, No. 1 (1 July 1989), p. 187.
-
(1989)
Journal of Applied Physics
, vol.66
, Issue.1
, pp. 187
-
-
Young, N.1
Gill, A.2
Clarence, I.3
-
27
-
-
0028330598
-
Built-in reliability through sodium elimination
-
April
-
"Built-in Reliability Through Sodium Elimination", Jeff Chinn, Yueh-Se Ho, and Mike Chang, Proceedings of the International Reliability Physics Symposium (IRPS 1994), April 1994, p. 249.
-
(1994)
Proceedings of the International Reliability Physics Symposium (IRPS 1994)
, pp. 249
-
-
Chinn, J.1
Ho, Y.-S.2
Chang, M.3
-
28
-
-
0022082008
-
Failure modes and mechanisms for VLSI ICs - A review
-
June
-
"Failure Modes and Mechanisms for VLSI ICs - A Review", Fausto Fantini and Carlo Morandi, IEE Proceedings - Part G: Electronic Circuits and Systems, Vol. 132, No. 3 (June 1985), p. 74.
-
(1985)
IEE Proceedings - Part G: Electronic Circuits and Systems
, vol.132
, Issue.3
, pp. 74
-
-
Fantini, F.1
Morandi, C.2
-
29
-
-
0029222898
-
An accelerated sodium resistance test for IC passivation films
-
May
-
"An Accelerated Sodium Resistance Test for IC Passivation Films", Charlie Hong, Brent Henson, Tony Scelsi, and Robert Hance, Proceedings of the International Reliability Physics Symposium (IRPS 1996), May 1996, p. 318.
-
(1996)
Proceedings of the International Reliability Physics Symposium (IRPS 1996)
, pp. 318
-
-
Hong, C.1
Henson, B.2
Scelsi, T.3
Hance, R.4
-
30
-
-
0033293553
-
Building a high-performance, programmable secure coprocessor
-
April
-
"Building a High-Performance, Programmable Secure Coprocessor", Sean Smith and Steve Weingart, Computer Networks, Vol. 31, No. 4 (April 1999), p. 831.
-
(1999)
Computer Networks
, vol.31
, Issue.4
, pp. 831
-
-
Smith, S.1
Weingart, S.2
-
31
-
-
0027594601
-
Memory LSI reliability
-
May
-
"Memory LSI Reliability", Masao Fukuma, Hiroshi Furuta, and Masahide Takada, Proceedings of the IEEE, Vol. 81, No. 5 (May 1993), p. 768.
-
(1993)
Proceedings of the IEEE
, vol.81
, Issue.5
, pp. 768
-
-
Fukuma, M.1
Furuta, H.2
Takada, M.3
-
33
-
-
0029756564
-
IDDQ testing for high performance CMOS - The next ten years
-
"IDDQ Testing for High Performance CMOS - The Next Ten Years", T. Williams, R. Kapur, M. Mercer, R. Dennard, and W. Maly, Proceedings of the European Design and Test Conference (EDTC'96), 1996, p. 578.
-
(1996)
Proceedings of the European Design and Test Conference (EDTC'96)
, pp. 578
-
-
Williams, T.1
Kapur, R.2
Mercer, M.3
Dennard, R.4
Maly, W.5
-
34
-
-
0141444711
-
Electrical characterization
-
Kluwer Academic Publishers
-
"Electrical Characterization", Steven Frank, Wilson Tan, and John West, in "Failure Analysis of Integrated Circuits: Tools and Techniques", Kluwer Academic Publishers, 1999, p. 13.
-
(1999)
Failure Analysis of Integrated Circuits: Tools and Techniques
, pp. 13
-
-
Frank, S.1
Tan, W.2
West, J.3
-
35
-
-
0004071496
-
-
John Wiley and Sons
-
nd Ed)", Dieter Schroder, John Wiley and Sons, 1998.
-
(1998)
nd Ed)
-
-
Schroder, D.1
-
36
-
-
0025448159
-
Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current
-
June
-
"Characterization of Hot-Electron-Stressed MOSFET's by Low-Temperature Measurements of the Drain Tunnel Current", Alexandre, Acovic, Michel Dutoit, and Marc Ilegems, IEEE Transactions on Electron Devices, Vol. 37, No. 6 (June 1990), p. 1467.
-
(1990)
IEEE Transactions on Electron Devices
, vol.37
, Issue.6
, pp. 1467
-
-
Alexandre, A.1
Dutoit, M.2
Ilegems, M.3
-
37
-
-
0031235683
-
Monitoring trapped charge generation for gate oxide under stress
-
September
-
"Monitoring Trapped Charge Generation for Gate Oxide Under Stress", Yung Hao Lin, Chung Len Lee, and Tan Fu Lei, IEEE Transactions on Electron Devices, Vol. 44, No. 9 (September 1997), p. 1441.
-
(1997)
IEEE Transactions on Electron Devices
, vol.44
, Issue.9
, pp. 1441
-
-
Lin, Y.H.1
Lee, C.L.2
Lei, T.F.3
-
38
-
-
10844272292
-
Characteristic length and time in electromigration
-
December
-
"Characteristic length and time in electromigration", Morris Shatzkes and Yusue Huang, Journal of Applied Physics, Vol. 74, No. 11 (December 1993), p. 6609.
-
(1993)
Journal of Applied Physics
, vol.74
, Issue.11
, pp. 6609
-
-
Shatzkes, M.1
Huang, Y.2
-
39
-
-
0027593771
-
IC failure analysis: Techniques and tools for quality and reliability improvement
-
May
-
"IC Failure Analysis: Techniques and Tools for Quality and Reliability Improvement", Jerry Soden and Richard Anderson, Proceedings of the IEEE, Vol. 81, No. 5 (May 1993), p. 703.
-
(1993)
Proceedings of the IEEE
, vol.81
, Issue.5
, pp. 703
-
-
Soden, J.1
Anderson, R.2
-
40
-
-
0026140747
-
The role of focused ion beams in physical failure analysis
-
April
-
"The role of focused ion beams in physical failure analysis", G. Matusiewicz, S. Kirch, V. Seeley, and P. Blauner, Proceedings of the International Reliability Physics Symposium (IRPS 1991), April 1991, p. 167.
-
(1991)
Proceedings of the International Reliability Physics Symposium (IRPS 1991)
, pp. 167
-
-
Matusiewicz, G.1
Kirch, S.2
Seeley, V.3
Blauner, P.4
-
41
-
-
0034334788
-
Chip detectives
-
November
-
"Chip Detectives", Jean Kumagai, IEEE Spectrum, Vol. 37, No. 11 (November 2000), p. 43.
-
(2000)
IEEE Spectrum
, vol.37
, Issue.11
, pp. 43
-
-
Kumagai, J.1
-
44
-
-
0029238068
-
Hot-carrier-induced circuit degradation in actual DRAM
-
April
-
"Hot-carrier-induced Circuit Degradation in Actual DRAM", Yoonjong Huh, Dooyoung Yang, Hyungsoon Shin, and Yungkwon Sung, Proceedings of the International Reliability Physics Symposium (IRPS 1995), April 1995, p. 72.
-
(1995)
Proceedings of the International Reliability Physics Symposium (IRPS 1995)
, pp. 72
-
-
Huh, Y.1
Yang, D.2
Shin, H.3
Sung, Y.4
-
46
-
-
0027847629
-
Metal electromigration damage healing under bidirectional current stress
-
December
-
"Metal Electromigration Damage Healing Under Bidirectional Current Stress", Jiang Tao, Nathan Cheung, and Chenming Ho, IEEE Electron Device Letters, Vol. 14, No. 12 (December 1993), p. 554.
-
(1993)
IEEE Electron Device Letters
, vol.14
, Issue.12
, pp. 554
-
-
Tao, J.1
Cheung, N.2
Ho, C.3
-
47
-
-
0028413845
-
An electromigration failure model for interconnects under pulsed and bidirectional current stressing
-
April
-
"An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing", Jiang Tao, Nathan Cheung, and Chenming Ho, IEEE Transactions on Electron Devices, Vol. 41, No. 4 (April 1994), p. 539.
-
(1994)
IEEE Transactions on Electron Devices
, vol.41
, Issue.4
, pp. 539
-
-
Tao, J.1
Cheung, N.2
Ho, C.3
-
48
-
-
0031247617
-
New write/Erase operation technology for flash EEPROM cells to improve the read disturb characteristics
-
October
-
"New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics", Tetsuo Endoh, Hirohisa Iizuka, Riichirou Shirota, and Fujio Masuoka, IEICE Transactions on Electron Devices, Vol. E80-C, No. 10 (October 1997), p. 1317.
-
(1997)
IEICE Transactions on Electron Devices
, vol.E80-C
, Issue.10
, pp. 1317
-
-
Endoh, T.1
Iizuka, H.2
Shirota, R.3
Masuoka, F.4
-
49
-
-
85077760837
-
A high-speed RSA encryption LSI with low power dissipation
-
Springer-Verlag LNCS No. 1396, September
-
"A High-Speed RSA Encryption LSI with Low Power Dissipation", A. Satoh, Y. Kobayashi, H. Niijima, N. Ooba, S. Munetoh, and S. Sone, Proceedings of the Information Security Workshop (ISW'97), Springer-Verlag LNCS No. 1396, September 1997.
-
(1997)
Proceedings of the Information Security Workshop (ISW'97)
-
-
Satoh, A.1
Kobayashi, Y.2
Niijima, H.3
Ooba, N.4
Munetoh, S.5
Sone, S.6
-
51
-
-
0019544106
-
Hot-electron injection into the oxide in n-channel MOS devices
-
March
-
"Hot-electron injection into the oxide in n-channel MOS devices", Boaz Eitan and Dov Frohman-Bentchkowsky, IEEE Transactions on Electron Devices, Vol. 28, No. 3 (March 1981), p. 328.
-
(1981)
IEEE Transactions on Electron Devices
, vol.28
, Issue.3
, pp. 328
-
-
Eitan, B.1
Frohman-Bentchkowsky, D.2
-
52
-
-
0022737546
-
Analysis and modeling of floating-gate EEPROM cells
-
June
-
"Analysis and Modeling of Floating-gate EEPROM Cells", Avinoam Kolodny, Sidney Nieh, and Boaz Eitan, IEEE Transactions on Electron Devices, Vol. 33, No. 6 (June 1986), p. 835
-
(1986)
IEEE Transactions on Electron Devices
, vol.33
, Issue.6
, pp. 835
-
-
Kolodny, A.1
Nieh, S.2
Eitan, B.3
-
53
-
-
0024132428
-
An in-system reprogrammable 256K CMOS flash memory
-
February
-
"An In-System Reprogrammable 256K CMOS Flash Memory", Virgil Kynett, Alan Baker, Mickey Fandrich, George Hoekstra, Owen Jungroth, Jerry Kreifels, and Steven Wells, Proceedings of the IEEE International Solid State Circuits Conference, February 1988, p. 132.
-
(1988)
Proceedings of the IEEE International Solid State Circuits Conference
, pp. 132
-
-
Kynett, V.1
Baker, A.2
Fandrich, M.3
Hoekstra, G.4
Jungroth, O.5
Kreifels, J.6
Wells, S.7
-
54
-
-
0024090079
-
An in-system reprogrammable 32K×8 CMOS flash memory
-
October
-
"An In-System Reprogrammable 32K×8 CMOS Flash Memory", Virgil Kynett, Alan Baker, Mick Fandrich, George Hoekstra, Owen Jungroth, Jerry Kreifels, Steven Wells, and Mark Winston, IEEE Journal of Solid-state Circuits, Vol. 23, No. 5 (October 1988), p. 1157.
-
(1988)
IEEE Journal of Solid-state Circuits
, vol.23
, Issue.5
, pp. 1157
-
-
Kynett, V.1
Baker, A.2
Fandrich, M.3
Hoekstra, G.4
Jungroth, O.5
Kreifels, J.6
Wells, S.7
Winston, M.8
-
55
-
-
0023563047
-
New ultra high density EPROM and flash EPROM cell with NAND structure
-
"New Ultra High Density EPROM and Flash EPROM Cell with NAND Structure", Fujio Masuoka, Masaki Momodomi, Yoshihisa Iwata, and Riichirou Shirota, International Electron Devices Meeting (IEDM'87) Technical Digest, 1987, p. 552.
-
(1987)
International Electron Devices Meeting (IEDM'87) Technical Digest
, pp. 552
-
-
Masuoka, F.1
Momodomi, M.2
Iwata, Y.3
Shirota, R.4
-
56
-
-
0026137736
-
A 4-mb NAND EEPROM with tight programmed Vt distribution
-
April
-
"A 4-Mb NAND EEPROM with Tight Programmed Vt Distribution", Masaki Momodomi, Tomoharu Tanaka, Yoshihisa Iwata, Yoshiyuki Tanaka, Hideko Oodaira, Yasuo Itoh, Riichirou Shirota, Kazunori Ohuchi, and Fujio Masuoka, IEEE Journal of Solid-state Circuits, Vol. 26, No. 4 (April 1991), p. 492.
-
(1991)
IEEE Journal of Solid-state Circuits
, vol.26
, Issue.4
, pp. 492
-
-
Momodomi, M.1
Tanaka, T.2
Iwata, Y.3
Tanaka, Y.4
Oodaira, H.5
Itoh, Y.6
Shirota, R.7
Ohuchi, K.8
Masuoka, F.9
-
57
-
-
0028538112
-
A quick intelligent page-programming architecture and a shielded bitline sensing method for 3V-only NAND flash memory
-
November
-
"A Quick Intelligent Page-Programming Architecture and a Shielded Bitline Sensing Method for 3V-Only NAND Flash Memory", Tomoharu Tanaka, Yoshiyuki Tanaka, Hiroshi Nakamura, Koji Sakui, Hideko Oodaira, Riichirou Shirota, Kazunori Ohuchi, Fujio Masuoka, and Hisashi Hara, IEEE Journal of Solid-state Circuits, Vol. 29, No. 11 (November 1994), p. 1366.
-
(1994)
IEEE Journal of Solid-state Circuits
, vol.29
, Issue.11
, pp. 1366
-
-
Tanaka, T.1
Tanaka, Y.2
Nakamura, H.3
Sakui, K.4
Oodaira, H.5
Shirota, R.6
Ohuchi, K.7
Masuoka, F.8
Hara, H.9
-
58
-
-
0031212918
-
Flash memory cells - An overview
-
August
-
"Flash Memory Cells - An Overview", Paolo Pavan, Roberto Bez, Piero Olivo, and Enrico Zanoni, Proceedings of the IEEE, Vol. 85, No. 8 (August 1997), p. 1248.
-
(1997)
Proceedings of the IEEE
, vol.85
, Issue.8
, pp. 1248
-
-
Pavan, P.1
Bez, R.2
Olivo, P.3
Zanoni, E.4
-
59
-
-
0029253928
-
A multilevel-cell 32Mb flash memory
-
February
-
"A multilevel-cell 32Mb flash memory", M. Bauer, R Alexis, B Atwood, K. Fazio, K. Frary, M. Hensel, M. Ishac, J. Javanifard, M. Landgraf, D. Leak, K. Loe, D. Mills, P. Ruby, R. Rozman, S. Sweha, K. Talreja, and K. Wojciechowski, Proceedings of the IEEE International Solid State Circuits Conference, February 1995, p. 132.
-
(1995)
Proceedings of the IEEE International Solid State Circuits Conference
, pp. 132
-
-
Bauer, M.1
Alexis, R.2
Atwood, B.3
Fazio, K.4
Frary, K.5
Hensel, M.6
Ishac, M.7
Javanifard, J.8
Landgraf, M.9
Leak, D.10
Loe, K.11
Mills, D.12
Ruby, P.13
Rozman, R.14
Sweha, S.15
Talreja, K.16
Wojciechowski, K.17
-
60
-
-
0033221598
-
A 256-mb multilevel flash memory with 2-MB/s program rate for mass storage applications
-
November
-
"A 256-Mb Multilevel Flash Memory with 2-MB/s Program Rate for Mass Storage Applications", Atsushi Nozoe, Hiroaki Kotani, Tetsuya Tsujikawa, Keiichi Yoshida, Kazunori Furusawa, Masataka Kato, Toshiaki Nishimoto, Hitoshi Kume, Hideaki Kurata, Naoki Miyamoto, Shoji Kubono, Michitaro Kanamitsu, Kenji Koda, Takeshi Nakayama, Yasuhiro Kouro, Akira Hosogane, Natsuo Ajika, and Kiyoteru Kobayashi, IEEE Journal of Solid-state Circuits, Vol. 34, No. 11 (November 1999), p. 1544.
-
(1999)
IEEE Journal of Solid-state Circuits
, vol.34
, Issue.11
, pp. 1544
-
-
Nozoe, A.1
Kotani, H.2
Tsujikawa, T.3
Yoshida, K.4
Furusawa, K.5
Kato, M.6
Nishimoto, T.7
Kume, H.8
Kurata, H.9
Miyamoto, N.10
Kubono, S.11
Kanamitsu, M.12
Koda, K.13
Nakayama, T.14
Kouro, Y.15
Hosogane, A.16
Ajika, N.17
Kobayashi, K.18
-
61
-
-
0024627110
-
Degradations due to hole trapping in flash memory cells
-
March
-
"Degradations due to Hole Trapping in Flash Memory Cells", Sameer Haddad, Chi Chang, Balaji Swaminathan, and Jih Lien, IEEE Electron Device Letters, Vol. 10, No. 3 (March 1989), p. 117.
-
(1989)
IEEE Electron Device Letters
, vol.10
, Issue.3
, pp. 117
-
-
Haddad, S.1
Chang, C.2
Swaminathan, B.3
Lien, J.4
-
62
-
-
0024735690
-
Degradation of tunnel-oxide floating-gate EEPROM devices and the correlation with high field-current-induced degradation of thin gate oxides
-
September
-
"Degradation of Tunnel-Oxide Floating-Gate EEPROM Devices and the Correlation with High Field-Current-Induced Degradation of Thin Gate Oxides", Johan Witters, Guido Groeseneken, and Herman Maes, IEEE Transactions on Electron Devices, Vol. 36, No. 9 (September 1989), p. 1663.
-
(1989)
IEEE Transactions on Electron Devices
, vol.36
, Issue.9
, pp. 1663
-
-
Witters, J.1
Groeseneken, G.2
Maes, H.3
-
63
-
-
0026910742
-
Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides
-
August
-
"Determination of Trapped Oxide Charge in Flash EPROMs and MOSFETs with Thin Oxides", K. Tamer San and Tso-Ping Ma, IEEE Electron Device Letters, Vol. 13, No. 8 (August 1992), p. 439.
-
(1992)
IEEE Electron Device Letters
, vol.13
, Issue.8
, pp. 439
-
-
Tamer San, K.1
Ma, T.-P.2
-
64
-
-
0027591522
-
Reliability issues of flash memory cells
-
May
-
"Reliability Issues of Flash Memory Cells", Seiichi Aritome, Riichiro Shirota, Gertjan Hemink, Tetsuo Endoh, and Fujio Masuoka, Proceedings of the IEEE, Vol. 81, No. 5 (May 1993), p. 776.
-
(1993)
Proceedings of the IEEE
, vol.81
, Issue.5
, pp. 776
-
-
Aritome, S.1
Shirota, R.2
Hemink, G.3
Endoh, T.4
Masuoka, F.5
-
65
-
-
0029197224
-
Effects of erase source bias on flash EPROM device reliability
-
January
-
"Effects of Erase Source Bias on Flash EPROM Device Reliability", K. Tamer San, Çetin Kaya, and T.P. Ma, IEEE Transactions on Electron Devices, Vol. 42, No. 1 (January 1995), p. 150.
-
(1995)
IEEE Transactions on Electron Devices
, vol.42
, Issue.1
, pp. 150
-
-
Tamer San, K.1
Kaya, C.2
Ma, T.P.3
-
66
-
-
0028312527
-
Flash EPROM disturb mechanisms
-
April
-
"Flash EPROM Disturb Mechanisms", Clyde Dunn, Çetin Kaya, Terry Lewis, Tim Strauss, John Schreck, Pat Hefly, Matt Middendorf, and Tamer San, Proceedings of the International Reliability Physics Symposium (IRPS 1994), April 1994, p. 299.
-
(1994)
Proceedings of the International Reliability Physics Symposium (IRPS 1994)
, pp. 299
-
-
Dunn, C.1
Kaya, C.2
Lewis, T.3
Strauss, T.4
Schreck, J.5
Hefly, P.6
Middendorf, M.7
San, T.8
-
67
-
-
33745035427
-
Retention characteristics of single-poly EEPROM cells
-
October
-
"Retention characteristics of single-poly EEPROM cells", C. Papadas, G. Ghibaudo, G. Pananakakis, C. Riva, P. Ghezzi, C. Gounelle, and P. Mortini, Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, October 1991, p. 517.
-
(1991)
Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
, pp. 517
-
-
Papadas, C.1
Ghibaudo, G.2
Pananakakis, G.3
Riva, C.4
Ghezzi, P.5
Gounelle, C.6
Mortini, P.7
-
68
-
-
0029406379
-
Write/Erase degradation in source side injection flash EEPROMs: Characterization techniques and wearout mechanisms
-
November
-
"Write/Erase Degradation in Source Side Injection Flash EEPROMs: Characterization Techniques and Wearout Mechanisms", Dirk Wellekens, Jan Van Houdt, Lorenzo Faraone, Guido Groeseneken, and Herman Maes, IEEE Transactions on Electron Devices, Vol. 42, No. 11 (November 1995), p. 1992.
-
(1995)
IEEE Transactions on Electron Devices
, vol.42
, Issue.11
, pp. 1992
-
-
Wellekens, D.1
Houdt, J.V.2
Faraone, L.3
Groeseneken, G.4
Maes, H.5
-
69
-
-
85077756016
-
Designing with flash memory
-
"Designing with Flash Memory", Brian Dipert, Annabooks, 1993.
-
(1993)
Annabooks
-
-
Dipert, B.1
-
70
-
-
0026918399
-
Non-volatile memory for fast, reliable file systems
-
October
-
"Non-volatile memory for fast, reliable file systems", Mary Baker, Satoshi Asami, Etienne Deprit, John Ouseterhout and Margo Seltzer, Proceedings of the Fifth International Conference on Architectural Support for Programming Languages and Operating Systems (ASPLOS-V), October 1992, p. 10.
-
(1992)
Proceedings of the Fifth International Conference on Architectural Support for Programming Languages and Operating Systems (ASPLOS-V)
, pp. 10
-
-
Baker, M.1
Asami, S.2
Deprit, E.3
Ouseterhout, J.4
Seltzer, M.5
-
72
-
-
0033359582
-
Cleaning policies in mobile computers using flash memory
-
1 November
-
"Cleaning policies in mobile computers using flash memory", M.-L. Chiang and R.-C. Chang, Journal of Systems and Software, Vol. 48, No. 3 (1 November 1999), p. 213.
-
(1999)
Journal of Systems and Software
, vol.48
, Issue.3
, pp. 213
-
-
Chiang, M.-L.1
Chang, R.-C.2
-
73
-
-
0032662212
-
High-speed DRAM architecture development
-
May
-
"High-Speed DRAM Architecture Development", Hiroaki Ikeda and Hidemori Inukai, IEEE Journal of Solid-state Circuits, Vol. 34, No. 5 (May 1999), p. 685.
-
(1999)
IEEE Journal of Solid-state Circuits
, vol.34
, Issue.5
, pp. 685
-
-
Ikeda, H.1
Inukai, H.2
-
74
-
-
0031269883
-
A four-level storage 4-Gb DRAM
-
November
-
"A Four-Level Storage 4-Gb DRAM", Takashi Okuda and Tatsunori Murotani, IEEE Journal of Solid-state Circuits, Vol. 32, No. 11 (November 1997), p. 1743.
-
(1997)
IEEE Journal of Solid-state Circuits
, vol.32
, Issue.11
, pp. 1743
-
-
Okuda, T.1
Murotani, T.2
|