메뉴 건너뛰기




Volumn , Issue , 2001, Pages

Data remanence in semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC STORAGE; RANDOM ACCESS STORAGE; REMANENCE; SEMICONDUCTOR STORAGE; SIDE CHANNEL ATTACK;

EID: 85084163443     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (124)

References (74)
  • 5
    • 0031672301 scopus 로고    scopus 로고
    • A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics
    • January
    • "A Numerical Analysis of the Storage Times of Dynamic Random-Access Memory Cells Incorporating Ultrathin Dielectrics", Alex Romanenko and W. Milton Gosney, IEEE Transactions on Electron Devices, Vol. 45, No. 1 (January 1998), p. 218.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.1 , pp. 218
    • Romanenko, A.1    Milton Gosney, W.2
  • 6
    • 0024479923 scopus 로고
    • Advanced cell structures for dynamic RAMs
    • January
    • "Advanced Cell Structures for Dynamic RAMs", Nicky Lu, IEEE Circuits and Devices Magazine, Vol. 5, No. 1 (January 1989), p. 27.
    • (1989) IEEE Circuits and Devices Magazine , vol.5 , Issue.1 , pp. 27
    • Lu, N.1
  • 7
    • 0032028617 scopus 로고    scopus 로고
    • DRAM technology perspective for gigabit era
    • March
    • "DRAM Technology Perspective for Gigabit Era", Kinam Kim, Chang-Gyu Hwang, and Jong Gil Lee, IEEE Transactions on Electron Devices, Vol. 45, No. 3 (March 1998), p. 598.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.3 , pp. 598
    • Kim, K.1    Hwang, C.-G.2    Lee, J.G.3
  • 9
    • 36449008541 scopus 로고
    • In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects
    • 1 October
    • "In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnects", K. Lee, C. Hu, and K. Tu, Journal of Applied Physics, Vol. 78, No. 7 (1 October 1995), p. 4428.
    • (1995) Journal of Applied Physics , vol.78 , Issue.7 , pp. 4428
    • Lee, K.1    Hu, C.2    Tu, K.3
  • 10
    • 1842617942 scopus 로고
    • Electromigration in metals
    • "Electromigration in Metals", Paul Ho and Thomas Kwok, Reports on Progress in Physics, Vol. 52, Part 1 (1989), p. 301.
    • (1989) Reports on Progress in Physics , vol.52 , pp. 301
    • Ho, P.1    Kwok, T.2
  • 11
    • 0347077990 scopus 로고
    • Theoretical and experimental study of electromigration
    • John Wiley and Sons
    • "Theoretical and Experimental Study of Electromigration", Jian Zhao, "Electromigration and Electronic Device Degradation", John Wiley and Sons, 1994, p. 167.
    • (1994) Electromigration and Electronic Device Degradation , pp. 167
    • Zhao, J.1
  • 12
    • 0001438054 scopus 로고    scopus 로고
    • On the unusual electromigration behaviour of copper interconnects
    • 1 October
    • "On the unusual electromigration behaviour of copper interconnects", E. Glickman and M. Nathan, Journal of Applied Physics, Vol. 80, No. 7 (1 October 1996), p. 3782.
    • (1996) Journal of Applied Physics , vol.80 , Issue.7 , pp. 3782
    • Glickman, E.1    Nathan, M.2
  • 15
    • 0026203342 scopus 로고
    • Dynamic degradation in MOSFET's - Part I: The physical effects
    • August
    • "Dynamic Degradation in MOSFET's - Part I: The Physical Effects", Martin Brox and Werner Weber, IEEE Transactions on Electron Devices, Vol. 38, No. 8 (August 1991), p. 1852.
    • (1991) IEEE Transactions on Electron Devices , vol.38 , Issue.8 , pp. 1852
    • Brox, M.1    Weber, W.2
  • 16
    • 0029305424 scopus 로고
    • Data storage in NOS: Lifetime and carrier-to-noise measurements
    • May
    • "Data Storage in NOS: Lifetime and Carrier-to-Noise Measurements", Bruce Terris and Robert Barrett, IEEE Transactions on Electron Devices, Vol. 42, No. 5 (May 1995), p. 944.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , Issue.5 , pp. 944
    • Terris, B.1    Barrett, R.2
  • 17
    • 0029229817 scopus 로고
    • How do hot carriers degrade N-channel MOSFETs?
    • January
    • "How do Hot Carriers Degrade N-Channel MOSFETs?", Kaizad Mistry and Brian Doyle, IEEE Circuits and Devices, Vol. 11, No. 1 (January 1995), p. 28.
    • (1995) IEEE Circuits and Devices , vol.11 , Issue.1 , pp. 28
    • Mistry, K.1    Doyle, B.2
  • 19
    • 0004916580 scopus 로고    scopus 로고
    • Hot-carrier degradation evolution in deep submicrometer CMOS technologies
    • October
    • "Hot-carrier Degradation Evolution in Deep Submicrometer CMOS Technologies", A. Bravaix, IEEE Integrated Reliability Workshop (IRW'99) Final Report, October 1999, p. 174.
    • (1999) IEEE Integrated Reliability Workshop (IRW'99) Final Report , pp. 174
    • Bravaix, A.1
  • 22
    • 0001595119 scopus 로고    scopus 로고
    • Time-resolved optical characterisation of electrical activity in integrated circuits
    • September
    • "Time-Resolved Optical Characterisation of Electrical Activity in Integrated Circuits", James Tsang, Jeffrey Kash, and David Vallett, Proceedings of the IEEE, Vol. 88, No. 9 (September 2000), p. 1440.
    • (2000) Proceedings of the IEEE , vol.88 , Issue.9 , pp. 1440
    • Tsang, J.1    Kash, J.2    Vallett, D.3
  • 23
    • 0029345745 scopus 로고
    • Setting the trap for hot carriers
    • July
    • "Setting the Trap for Hot Carriers", Shian Aur, Charvaka Duvvury, and William Hunter, IEEE Circuits and Devices, Vol. 11, No. 4 (July 1995), p. 18.
    • (1995) IEEE Circuits and Devices , vol.11 , Issue.4 , pp. 18
    • Aur, S.1    Duvvury, C.2    Hunter, W.3
  • 24
    • 0030189168 scopus 로고    scopus 로고
    • Design considerations for CMOS digital circuits with improved hot-carrier reliability
    • July
    • "Design Considerations for CMOS Digital Circuits with Improved Hot-Carrier Reliability", Yusuf Leblebici, IEEE Journal of Solid-state Circuits, Vol. 31, No. 7 (July 1996), p. 1014.
    • (1996) IEEE Journal of Solid-state Circuits , vol.31 , Issue.7 , pp. 1014
    • Leblebici, Y.1
  • 25
    • 0032204017 scopus 로고    scopus 로고
    • Hot-carrier-induced alterations of MOSFET capacitances: A quantitative monitor for electrical degradation
    • November
    • "Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation", David Esseni, Augusto Pieracci, Manrico Quadrelli, and Bruno Riccò, IEEE Transactions on Electron Devices, Vol. 45, No. 11 (November 1998), p. 2319.
    • (1998) IEEE Transactions on Electron Devices , vol.45 , Issue.11 , pp. 2319
    • Esseni, D.1    Pieracci, A.2    Quadrelli, M.3    Riccò, B.4
  • 26
    • 0011184135 scopus 로고
    • Mobile ion effects in low-temperature silicon oxides
    • 1 July
    • "Mobile ion effects in low-temperature silicon oxides", N. Young, A. Gill, and I. Clarence, Journal of Applied Physics, Vol. 66, No. 1 (1 July 1989), p. 187.
    • (1989) Journal of Applied Physics , vol.66 , Issue.1 , pp. 187
    • Young, N.1    Gill, A.2    Clarence, I.3
  • 30
    • 0033293553 scopus 로고    scopus 로고
    • Building a high-performance, programmable secure coprocessor
    • April
    • "Building a High-Performance, Programmable Secure Coprocessor", Sean Smith and Steve Weingart, Computer Networks, Vol. 31, No. 4 (April 1999), p. 831.
    • (1999) Computer Networks , vol.31 , Issue.4 , pp. 831
    • Smith, S.1    Weingart, S.2
  • 31
  • 35
    • 0004071496 scopus 로고    scopus 로고
    • John Wiley and Sons
    • nd Ed)", Dieter Schroder, John Wiley and Sons, 1998.
    • (1998) nd Ed)
    • Schroder, D.1
  • 36
    • 0025448159 scopus 로고
    • Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current
    • June
    • "Characterization of Hot-Electron-Stressed MOSFET's by Low-Temperature Measurements of the Drain Tunnel Current", Alexandre, Acovic, Michel Dutoit, and Marc Ilegems, IEEE Transactions on Electron Devices, Vol. 37, No. 6 (June 1990), p. 1467.
    • (1990) IEEE Transactions on Electron Devices , vol.37 , Issue.6 , pp. 1467
    • Alexandre, A.1    Dutoit, M.2    Ilegems, M.3
  • 37
    • 0031235683 scopus 로고    scopus 로고
    • Monitoring trapped charge generation for gate oxide under stress
    • September
    • "Monitoring Trapped Charge Generation for Gate Oxide Under Stress", Yung Hao Lin, Chung Len Lee, and Tan Fu Lei, IEEE Transactions on Electron Devices, Vol. 44, No. 9 (September 1997), p. 1441.
    • (1997) IEEE Transactions on Electron Devices , vol.44 , Issue.9 , pp. 1441
    • Lin, Y.H.1    Lee, C.L.2    Lei, T.F.3
  • 38
    • 10844272292 scopus 로고
    • Characteristic length and time in electromigration
    • December
    • "Characteristic length and time in electromigration", Morris Shatzkes and Yusue Huang, Journal of Applied Physics, Vol. 74, No. 11 (December 1993), p. 6609.
    • (1993) Journal of Applied Physics , vol.74 , Issue.11 , pp. 6609
    • Shatzkes, M.1    Huang, Y.2
  • 39
    • 0027593771 scopus 로고
    • IC failure analysis: Techniques and tools for quality and reliability improvement
    • May
    • "IC Failure Analysis: Techniques and Tools for Quality and Reliability Improvement", Jerry Soden and Richard Anderson, Proceedings of the IEEE, Vol. 81, No. 5 (May 1993), p. 703.
    • (1993) Proceedings of the IEEE , vol.81 , Issue.5 , pp. 703
    • Soden, J.1    Anderson, R.2
  • 41
    • 0034334788 scopus 로고    scopus 로고
    • Chip detectives
    • November
    • "Chip Detectives", Jean Kumagai, IEEE Spectrum, Vol. 37, No. 11 (November 2000), p. 43.
    • (2000) IEEE Spectrum , vol.37 , Issue.11 , pp. 43
    • Kumagai, J.1
  • 46
    • 0027847629 scopus 로고
    • Metal electromigration damage healing under bidirectional current stress
    • December
    • "Metal Electromigration Damage Healing Under Bidirectional Current Stress", Jiang Tao, Nathan Cheung, and Chenming Ho, IEEE Electron Device Letters, Vol. 14, No. 12 (December 1993), p. 554.
    • (1993) IEEE Electron Device Letters , vol.14 , Issue.12 , pp. 554
    • Tao, J.1    Cheung, N.2    Ho, C.3
  • 47
    • 0028413845 scopus 로고
    • An electromigration failure model for interconnects under pulsed and bidirectional current stressing
    • April
    • "An Electromigration Failure Model for Interconnects Under Pulsed and Bidirectional Current Stressing", Jiang Tao, Nathan Cheung, and Chenming Ho, IEEE Transactions on Electron Devices, Vol. 41, No. 4 (April 1994), p. 539.
    • (1994) IEEE Transactions on Electron Devices , vol.41 , Issue.4 , pp. 539
    • Tao, J.1    Cheung, N.2    Ho, C.3
  • 48
    • 0031247617 scopus 로고    scopus 로고
    • New write/Erase operation technology for flash EEPROM cells to improve the read disturb characteristics
    • October
    • "New Write/Erase Operation Technology for Flash EEPROM Cells to Improve the Read Disturb Characteristics", Tetsuo Endoh, Hirohisa Iizuka, Riichirou Shirota, and Fujio Masuoka, IEICE Transactions on Electron Devices, Vol. E80-C, No. 10 (October 1997), p. 1317.
    • (1997) IEICE Transactions on Electron Devices , vol.E80-C , Issue.10 , pp. 1317
    • Endoh, T.1    Iizuka, H.2    Shirota, R.3    Masuoka, F.4
  • 51
    • 0019544106 scopus 로고
    • Hot-electron injection into the oxide in n-channel MOS devices
    • March
    • "Hot-electron injection into the oxide in n-channel MOS devices", Boaz Eitan and Dov Frohman-Bentchkowsky, IEEE Transactions on Electron Devices, Vol. 28, No. 3 (March 1981), p. 328.
    • (1981) IEEE Transactions on Electron Devices , vol.28 , Issue.3 , pp. 328
    • Eitan, B.1    Frohman-Bentchkowsky, D.2
  • 52
    • 0022737546 scopus 로고
    • Analysis and modeling of floating-gate EEPROM cells
    • June
    • "Analysis and Modeling of Floating-gate EEPROM Cells", Avinoam Kolodny, Sidney Nieh, and Boaz Eitan, IEEE Transactions on Electron Devices, Vol. 33, No. 6 (June 1986), p. 835
    • (1986) IEEE Transactions on Electron Devices , vol.33 , Issue.6 , pp. 835
    • Kolodny, A.1    Nieh, S.2    Eitan, B.3
  • 57
    • 0028538112 scopus 로고
    • A quick intelligent page-programming architecture and a shielded bitline sensing method for 3V-only NAND flash memory
    • November
    • "A Quick Intelligent Page-Programming Architecture and a Shielded Bitline Sensing Method for 3V-Only NAND Flash Memory", Tomoharu Tanaka, Yoshiyuki Tanaka, Hiroshi Nakamura, Koji Sakui, Hideko Oodaira, Riichirou Shirota, Kazunori Ohuchi, Fujio Masuoka, and Hisashi Hara, IEEE Journal of Solid-state Circuits, Vol. 29, No. 11 (November 1994), p. 1366.
    • (1994) IEEE Journal of Solid-state Circuits , vol.29 , Issue.11 , pp. 1366
    • Tanaka, T.1    Tanaka, Y.2    Nakamura, H.3    Sakui, K.4    Oodaira, H.5    Shirota, R.6    Ohuchi, K.7    Masuoka, F.8    Hara, H.9
  • 58
    • 0031212918 scopus 로고    scopus 로고
    • Flash memory cells - An overview
    • August
    • "Flash Memory Cells - An Overview", Paolo Pavan, Roberto Bez, Piero Olivo, and Enrico Zanoni, Proceedings of the IEEE, Vol. 85, No. 8 (August 1997), p. 1248.
    • (1997) Proceedings of the IEEE , vol.85 , Issue.8 , pp. 1248
    • Pavan, P.1    Bez, R.2    Olivo, P.3    Zanoni, E.4
  • 61
    • 0024627110 scopus 로고
    • Degradations due to hole trapping in flash memory cells
    • March
    • "Degradations due to Hole Trapping in Flash Memory Cells", Sameer Haddad, Chi Chang, Balaji Swaminathan, and Jih Lien, IEEE Electron Device Letters, Vol. 10, No. 3 (March 1989), p. 117.
    • (1989) IEEE Electron Device Letters , vol.10 , Issue.3 , pp. 117
    • Haddad, S.1    Chang, C.2    Swaminathan, B.3    Lien, J.4
  • 62
    • 0024735690 scopus 로고
    • Degradation of tunnel-oxide floating-gate EEPROM devices and the correlation with high field-current-induced degradation of thin gate oxides
    • September
    • "Degradation of Tunnel-Oxide Floating-Gate EEPROM Devices and the Correlation with High Field-Current-Induced Degradation of Thin Gate Oxides", Johan Witters, Guido Groeseneken, and Herman Maes, IEEE Transactions on Electron Devices, Vol. 36, No. 9 (September 1989), p. 1663.
    • (1989) IEEE Transactions on Electron Devices , vol.36 , Issue.9 , pp. 1663
    • Witters, J.1    Groeseneken, G.2    Maes, H.3
  • 63
    • 0026910742 scopus 로고
    • Determination of trapped oxide charge in flash EPROMs and MOSFETs with thin oxides
    • August
    • "Determination of Trapped Oxide Charge in Flash EPROMs and MOSFETs with Thin Oxides", K. Tamer San and Tso-Ping Ma, IEEE Electron Device Letters, Vol. 13, No. 8 (August 1992), p. 439.
    • (1992) IEEE Electron Device Letters , vol.13 , Issue.8 , pp. 439
    • Tamer San, K.1    Ma, T.-P.2
  • 65
    • 0029197224 scopus 로고
    • Effects of erase source bias on flash EPROM device reliability
    • January
    • "Effects of Erase Source Bias on Flash EPROM Device Reliability", K. Tamer San, Çetin Kaya, and T.P. Ma, IEEE Transactions on Electron Devices, Vol. 42, No. 1 (January 1995), p. 150.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , Issue.1 , pp. 150
    • Tamer San, K.1    Kaya, C.2    Ma, T.P.3
  • 68
    • 0029406379 scopus 로고
    • Write/Erase degradation in source side injection flash EEPROMs: Characterization techniques and wearout mechanisms
    • November
    • "Write/Erase Degradation in Source Side Injection Flash EEPROMs: Characterization Techniques and Wearout Mechanisms", Dirk Wellekens, Jan Van Houdt, Lorenzo Faraone, Guido Groeseneken, and Herman Maes, IEEE Transactions on Electron Devices, Vol. 42, No. 11 (November 1995), p. 1992.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , Issue.11 , pp. 1992
    • Wellekens, D.1    Houdt, J.V.2    Faraone, L.3    Groeseneken, G.4    Maes, H.5
  • 69
    • 85077756016 scopus 로고
    • Designing with flash memory
    • "Designing with Flash Memory", Brian Dipert, Annabooks, 1993.
    • (1993) Annabooks
    • Dipert, B.1
  • 72
    • 0033359582 scopus 로고    scopus 로고
    • Cleaning policies in mobile computers using flash memory
    • 1 November
    • "Cleaning policies in mobile computers using flash memory", M.-L. Chiang and R.-C. Chang, Journal of Systems and Software, Vol. 48, No. 3 (1 November 1999), p. 213.
    • (1999) Journal of Systems and Software , vol.48 , Issue.3 , pp. 213
    • Chiang, M.-L.1    Chang, R.-C.2
  • 73
    • 0032662212 scopus 로고    scopus 로고
    • High-speed DRAM architecture development
    • May
    • "High-Speed DRAM Architecture Development", Hiroaki Ikeda and Hidemori Inukai, IEEE Journal of Solid-state Circuits, Vol. 34, No. 5 (May 1999), p. 685.
    • (1999) IEEE Journal of Solid-state Circuits , vol.34 , Issue.5 , pp. 685
    • Ikeda, H.1    Inukai, H.2
  • 74
    • 0031269883 scopus 로고    scopus 로고
    • A four-level storage 4-Gb DRAM
    • November
    • "A Four-Level Storage 4-Gb DRAM", Takashi Okuda and Tatsunori Murotani, IEEE Journal of Solid-state Circuits, Vol. 32, No. 11 (November 1997), p. 1743.
    • (1997) IEEE Journal of Solid-state Circuits , vol.32 , Issue.11 , pp. 1743
    • Okuda, T.1    Murotani, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.