A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics

IEEE Transactions on Electron Devices

Volumn 45, Issue 1, 1998, Pages 218-223

  Romanenko, Alex Y ^a,b   Milton Gosney, W ^a,b  

^a SOUTHERN METHODIST UNIVERSITY   (United States)

^b Decision Focus Inc   (United States)

Author keywords

DRAM; Leakage currents; Storage times; Tunneling; Ultrathin dielectrics

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICA;

DYNAMIC RANDOM ACCESS MEMORY (DRAM); HIGH FIELD POLE FRENKEL CONDUCTION;

RANDOM ACCESS STORAGE;

EID: 0031672301     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658834     Document Type: Article

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