Direct bandgap transition in many-layer MoS2 by plasma-induced layer decoupling

Advanced Materials

Volumn 27, Issue 9, 2015, Pages 1573-1578

  Dhall, Rohan ^a,b   Neupane, Mahesh R ^c   Wickramaratne, Darshana ^c   Mecklenburg, Matthew ^b   Li, Zhen ^a   Moore, Cameron ^d   Lake, Roger K ^c   Cronin, Stephen ^a  

^a University of Southern California   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c University of California Riverside   (United States)

^d XEI Scientific   (United States)

Author keywords

Density functional theory (DFT); Intercalation; Many layer MoS2; Photoluminescence; Transition metal dichalcogenides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCULATIONS; DENSITY (OPTICAL); DENSITY FUNCTIONAL THEORY; DENSITY MEASUREMENT (OPTICAL); ENERGY GAP; INTERCALATION; MONOLAYERS; OXYGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; TRANSITION METALS;

AB INITIO CALCULATIONS; BANDGAP TRANSITION; DIRECT-GAP SEMICONDUCTOR; INTERLAYER SEPARATION; MANY-LAYER MOS2; OPTOELECTRONIC PROPERTIES; OXYGEN PLASMA TREATMENTS; TRANSITION METAL DICHALCOGENIDES;

MOLYBDENUM COMPOUNDS;

EID: 85027954928     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201405259     Document Type: Article

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