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Volumn 80, Issue 8, 2009, Pages

Nonequilibrium breakdown of quantum Hall state in graphene

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EID: 70349438754     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.081404     Document Type: Article
Times cited : (42)

References (28)
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    • Nominally, the filling factor is defined as the ratio of number of charge carriers to the number of magnetic flux quanta penetrating the sample and therefore is positive. However, in the context of QHE in graphene a negative filling factor is used to distinguish the filling factor of holes from that of electrons (cf. Refs.).
    • Nominally, the filling factor is defined as the ratio of number of charge carriers to the number of magnetic flux quanta penetrating the sample and therefore is positive. However, in the context of QHE in graphene a negative filling factor is used to distinguish the filling factor of holes from that of electrons (cf. Refs.).
  • 20
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    • The ν=10 is not studied as the gate voltage required to study it can lead to a dielectric breakdown of the gate-dielectric SiO2.
    • The ν=10 is not studied as the gate voltage required to study it can lead to a dielectric breakdown of the gate-dielectric SiO2.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.