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Advanced Materials

Volumn 27, Issue 16, 2015, Pages 2589-2594

Arc-Melting to Narrow the Bandgap of Oxide Semiconductors

(8) Ou, Gang a Li, Dongke a Pan, Wei a Zhang, Qinghua a Xu, Ben a Gu, Lin b,c Nan, Cewen a Wu, Hui a

a TSINGHUA UNIVERSITY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

c Collaborative Innovation Center of Quantum Matter ^* (China)

Author keywords

bandgap engineering; defect chemistry; inorganic semiconductors; photocatalysts

Indexed keywords

DEFECTS; ENERGY GAP; II-VI SEMICONDUCTORS; MELTING; OXIDE MINERALS; PHOTOCATALYSTS; PHOTOCATALYTIC ACTIVITY; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; PHASE STRUCTURE;

ARC-MELTING METHODS; BAND GAP ENGINEERING; COOLING PROCESS; DEFECT CHEMISTRY; DEFECTIVE STRUCTURES; INORGANIC SEMICONDUCTORS; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOCATALYTIC PROPERTY; OXIDE SEMICONDUCTOR;

OXIDE SEMICONDUCTORS; MELTING;

EID: 85027934979 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201405763 Document Type: Article

Times cited : (58)

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