X-Ray diffraction and Raman spectroscopy for a better understanding of ZnO:Al growth process

EPJ Photovoltaics

Volumn 2, Issue , 2011, Pages

  Charpentier, C ^a,b   Prod'homme, P ^a   Maurin, I ^c   Chaigneau, M ^b   Roca, Cabarrocas P I ^b  

^a TOTAL   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATMOSPHERIC TEMPERATURE; CRYSTALLINITY; CRYSTALLITE SIZE; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; RAMAN SPECTROSCOPY; SUBSTRATES; ZINC OXIDE;

DEPOSITION PARAMETERS; HALL EFFECT MEASUREMENT; MICROSTRUCTURAL ANALYSIS; RF-MAGNETRON SPUTTERING; SPUTTERED PARTICLES; STRUCTURE ZONE MODEL; SUBSTRATE TEMPERATURE; ZNO:AL THIN FILMS;

X RAY DIFFRACTION;

EID: 85018393500     PISSN: None     EISSN: 21050716     Source Type: Journal    
DOI: 10.1051/epjpv/2011026     Document Type: Article

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