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Volumn 159, Issue 8, 2012, Pages H675-H679

Cu(111) Surface Passivation with Atomic Layers of Te, Se or I, Studied Using Auger Spectrscopy

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Indexed keywords


EID: 85016893306     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/2.001208jes     Document Type: Article
Times cited : (4)

References (35)
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    • (1978) John Wiley: New York. , pp. 125
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  • 17
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    • Electrocatalytic Properties of the Surfaces Modified by Foreign Metal Ad Atoms, in Advances in Electrochemistry and Electrochemical Engineering
    • R. R. Adzic, Electrocatalytic Properties of the Surfaces Modified by Foreign Metal Ad Atoms, in Advances in Electrochemistry and Electrochemical Engineering, H. Gerishcher and C. W. Tobias, Editors. 1984, Wiley-Interscience: New York. p. 159.
    • (1984) Wiley-Interscience: New York. , pp. 159
    • Adzic, R.R.1    Gerishcher, H.2    Tobias, C.W.3
  • 28
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    • Compound semiconductor formation by electrochemical atomic layer eptiaxy (EC-ALE): Surface Chemistry, in Encyclopedia of Surface and Colloid Science
    • J. L. Stickney, et al., Compound semiconductor formation by electrochemical atomic layer eptiaxy (EC-ALE): Surface Chemistry, in Encyclopedia of Surface and Colloid Science, A. T. Hubbard, Editor 2002, Marcel Dekker, Inc.: New York. p. 1129-1161.
    • (2002) Marcel Dekker, Inc.: New York. , pp. 1129-1161
    • Stickney, J.L.1    Hubbard, A.T.2
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.