Low temperature Cu-Cu bonding using Ag nanoparticles by PVD

2016 6th Electronic System-Integration Technology Conference, ESTC 2016

Volumn , Issue , 2016, Pages

  Wu, Zijian ^a   Wang, Qian ^a   Tan, Lin ^a   Liu, Ziyu ^a   Seo, Sun Kyoung ^b   Cho, Tae Je ^b   Cai, Jian ^a  

^a TSINGHUA UNIVERSITY   (China)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FRACTURE; METAL NANOPARTICLES; NANOPARTICLES; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SILVER; TEMPERATURE;

AG NANOPARTICLE; BONDED INTERFACE; BONDING PROCESS; BONDING STRUCTURE; ENERGY DISPERSIVE X-RAY; FRACTURE SURFACES; LOW TEMPERATURES; POST ANNEALING;

WAFER BONDING;

EID: 85015070724     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESTC.2016.7764715     Document Type: Conference Paper

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