Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2837-2839

  Koh, Meishoku ^a   Goto, Tomomi ^a   Sugita, Atsushi ^a   Tanii, Takashi ^a   Iida, Tomoyuki ^a   Shinada, Takahiro ^a   Matsukawa, Takashi ^b   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Dopant ion implantation; Field emitter; HF; Hydrazine; Nanopyramid array; Si; SiO2; Wet etching

Indexed keywords

ETCHING; HYDRAZINE; ION IMPLANTATION; IONS; PHOSPHORUS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE PHENOMENA;

NANOPYRAMID ARRAY; WET ETCHING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035300809     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2837     Document Type: Article

References (12)