Multiple independent gate field effect transistor (MIGFET) - Multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 200-201

  Mathew, L ^b   Du, Yang ^b   Kalpat, S ^b   Sadd, M ^b   Zavala, M ^b   Stephens, T ^b   Mora, R ^b   Rai, R ^b   Becker, S ^b   Parker, C ^b   Sing, D ^b   Shimer, R ^b   Sanez, J ^b   Thean, A V Y ^b   Prabhu, L ^b   Moosa, M ^b   Nguyen, B Y ^b   Mogab, J ^b   Workman, G O ^b   Vandooren, A ^b   Shi, Z ^b   Chowdhury, M M ^a   Zhang, W ^a   Fossum, J G ^a   more..

^a UNIVERSITY OF FLORIDA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; GATES (TRANSISTOR); THERMAL EFFECTS; TRANSCEIVERS;

INDEPENDENT GATE MODES; MULTI-GATED DIGITAL CMOS; MULTIPLE INDEPENDENT GATE FIELD EFFECT TRANSISTOR (MIGFET); SINGLE TRANSISTOR MEMORIES;

FIELD EFFECT TRANSISTORS;

EID: 33745144309     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469267     Document Type: Conference Paper

References (5)

1. D. Hisamoto et al IEDM 1998 p 1032, 1998
2. L. Mathew et al SOI Conf. 2004
3. Gen Pei, IEEE TRANS. ON ELECTRON DEVICES, VOL. 51, NO. 12, DEC. 2004
4. S. Okhonin et al VLSI 2005 (Submitted)
5. J.G. Fossum et al SSE Vol. 48, pp 919, June 20