Characterization, modeling of 10-kV SiC JBS diodes and their application prospect in X-ray generators

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Volumn , Issue , 2009, Pages 1488-1493

  Wang, Jun ^a   Du, Yu ^a   Bhattacharya, Subhashish ^a   Huang, Alex Q ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Junction Barrier Schottky (JBS) diode; Rectifier; Silicon Carbide (SiC); X ray generator

Indexed keywords

APPLICATION PROSPECT; HIGH VOLTAGE POWER; HIGH VOLTAGE RECTIFIERS; JUNCTION BARRIER SCHOTTKY (JBS) DIODE; JUNCTION BARRIER SCHOTTKY DIODES; P-SPICE SIMULATION; POWER ELECTRONIC SYSTEMS; POWER-LOSSES; SERIES DIODE; SIMULATION RESULT; SPICE MODEL; ULTRA-FAST; X RAY GENERATORS;

ACTIVE FILTERS; ASYNCHRONOUS GENERATORS; DIODES; ELECTRIC RECTIFIERS; ENERGY CONVERSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SIMULATORS; SPICE; X RAYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72449197461     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2009.5315963     Document Type: Conference Paper

References (4)

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