Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers

Nature Communications

Volumn 7, Issue , 2016, Pages

  Yu, Woo Jong ^a,b,c   Vu, Quoc An ^b,d   Oh, Hyemin ^b,d   Nam, Hong Gi ^b,d   Zhou, Hailong ^a   Cha, Soonyoung ^e   Kim, Joo Youn ^e   Carvalho, Alexandra ^f   Jeong, Munseok ^b,d   Choi, Hyunyong ^e   Castro Neto, A H ^f   Lee, Young Hee ^b,d   Duan, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Sungkyunkwan University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Institute for Basic Science   (South Korea)

^e Yonsei University   (South Korea)

^f National University of Singapore   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; MOLYBDENUM;

CARBON; DESIGN METHOD; ELECTRONIC EQUIPMENT; EXTRACTION METHOD; SPECTRAL ANALYSIS; THEORETICAL STUDY;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRON; PHOTON; PHOTOREACTIVITY; QUANTUM MECHANICS; SEMICONDUCTOR; SHORT CIRCUIT CURRENT; THEORETICAL MODEL; VAN DER WAAL HETEROSTRUCTURE;

EID: 84995488505     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms13278     Document Type: Article

References (32)

1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451-10453 (2005).
2. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
3. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
4. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
5. Duan, X., Wang, C., Pan, A., Yu, R. & Duan, X. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem. Soc. Rev. 44, 8859-8876 (2015).
6. Yu, W. J. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246-252 (2013).
7. Yu, W. J. et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 8, 952-958 (2013).
8. Liu, Y. et al. Van der Waals heterostructures and devices. Nat. Rev. Mater. 1, 16042 (2016).
9. Ponomarenko, L. A. et al. Tunable metal-insulator transition in double-layer graphene heterostructures. Nat. Phys. 7, 958-961 (2011).
10. Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947-950 (2012).
11. Georgiou, T. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8, 100-103 (2013).
12. Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311-1314 (2013).
13. Lee, C.-H. et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 575-681 (2014).
14. He, J. et al. Electron transfer and coupling in graphene-tungsten disulfide van der Waals heterostructures. Nat. Commun. 5, 5622 (2014).
15. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
16. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
17. Massicotte, M. et al. Picosecond photoresponse in van der Waals heterostructures. Nat. Nanotechnol. 11, 42-46 (2016).
18. Lee, G. H. et al. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett. 99, 243114 (2011).
19. Kozawa, D. et al. Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides. Nat. Commun. 5, 4543 (2014).
20. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices (Wiley, 2007).
21. Liboff, R. L. Introductory Quantum Mechanics (Addison Wesley, 2003).
22. Hwang, C. et al. Fermi velocity engineering in graphene by substrate modification. Sci. Rep. 5, 590 (2012).
23. Elias, D. C. et al. Dirac cones reshaped by interaction effects in suspended graphene. Nat. Phys. 7, 701 (2011).
24. Chen, X. et al. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures. Nat. Commun. 6, 6088 (2015).
25. Livingston, J. D. Electronic Properties of Engineering Materials (Wiley & Sons, Inc., 1999).
26. Neamen, D. A. Semiconductor Physics and Devices (McGraw-Hill, 2012).
27. Li, X. et al. Large-area synthesis of high quality and uniform graphene films on copper foils. Science 324, 1312-1314 (2009).
28. Zhou, H. et al. Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene. Nat. Commun 4, 2096 (2013).
29. Giannozzi, P. et al. The pseudopotentials used were either obtained from the Quantum ESPRESSO distribution or produced using the atomic code by A. Dal Corso, that comes in the Quantum ESPRESSO distribution. J. Phys.-Cond. Matter 21, 395502 (2009).
30. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 (1996).
31. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 (1976).
32. Wilson, J. A. & Yoffe, A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193-335 (1969).