High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2

ACS Nano

Volumn 10, Issue 8, 2016, Pages 7507-7514

  Mleczko, Michal J ^a   Xu, Runjie Lily ^a   Okabe, Kye ^a   Kuo, Hsueh Hui ^a   Fisher, Ian R ^b   Wong, H S Philip ^a   Nishi, Yoshio ^a   Pop, Eric ^a,b  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

current density; environmental stability; semimetals; thermal conductivity; transition metal dichalcogenides; two dimensional atomic layers

Indexed keywords

CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON EMISSION; METALLOIDS; TRANSITION METALS;

ATOMIC LAYER; ELECTRICAL MEASUREMENT; ELECTRO-THERMAL MODEL; ENVIRONMENTAL STABILITY; HIGH CURRENT DENSITIES; LOW THERMAL CONDUCTIVITY; TRANSITION METAL DICHALCOGENIDES; TWO DIMENSIONAL (2 D);

THERMAL CONDUCTIVITY;

EID: 84983542341     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b02368     Document Type: Article

References (61)

1. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275 10.1038/nchem.1589
2. Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics Based on Two-Dimensional Materials Nat. Nanotechnol. 2014, 9, 768-779 10.1038/nnano.2014.207
3. Neto, A. H. C.; Novoselov, K. New Directions in Science and Technology: Two-Dimensional Crystals Rep. Prog. Phys. 2011, 74, 082501 10.1088/0034-4885/74/8/082501
4. 2 Acta Crystallogr. 1966, 20, 268-274 10.1107/S0365110X66000513
5. 2 J. Phys. C: Solid State Phys. 1987, 20, 6159-6174 10.1088/0022-3719/20/36/017
6. 4 J. Am. Chem. Soc. 1992, 114, 8963-8971 10.1021/ja00049a029
7. 2 Nat. Phys. 2015, 11, 482-486 10.1038/nphys3314
8. Duerloo, K.-A. N.; Li, Y.; Reed, E. J. Structural Phase Transitions in Two-Dimensional Mo- and W-Dichalcogenide Monolayers Nat. Commun. 2014, 5, 4214 10.1038/ncomms5214
9. Wilson, J. A.; Yoffe, A. D. Transition Metal Dichalcogenides Discussion and Interpretation of Observed Optical, Electrical and Structural Properties Adv. Phys. 1969, 18, 193-335 10.1080/00018736900101307
10. 2-Type Selenides and Tellurides of Niobium, Tantalum, Molybdenum and Tungsten J. Inorg. Nucl. Chem. 1962, 24, 257-263 10.1016/0022-1902(62)80178-X
11. 2 Nature 2014, 514, 205-208 10.1038/nature13763
12. 2 Phys. Rev. Lett. 2014, 113, 216601 10.1103/PhysRevLett.113.216601
13. 2 for the Extraordinary Magnetoresistance: From Bulk to Monolayer Europhys. Lett. 2015, 110, 37004 10.1209/0295-5075/110/37004
14. Liu, Y.; Stradins, P.; Wei, S.-H. Van der Waals Metal-Semiconductor Junction: Weak Fermi Level Pinning Enables Effective Tuning of Schottky Barrier Sci. Adv. 2016, 2, 1600069 10.1126/sciadv.1600069
15. 2 as a Two-Dimensional Metallic Contact for 2D Semiconductors. In 74th Device Research Conference; IEEE: Newark, DE, 2016.
16. Lee, C.-H.; Cruz-Silva, E.; Calderin, L.; Nguyen, M. A. T.; Hollander, M. J.; Bersch, B.; Mallouk, T. E.; Robinson, J. A. Tungsten Ditelluride: a Layered Semimetal Sci. Rep. 2015, 5, 10013 10.1038/srep10013
17. 2 Evolving from Bulk to Monolayer Sci. Rep. 2016, 6, 19624-19624 10.1038/srep19624
18. 2 J. Phys.: Condens. Matter 2015, 27, 285401 10.1088/0953-8984/27/28/285401
19. Wang, L.; Gutierrez-Lezama, I.; Barreteau, C.; Ubrig, N.; Giannini, E.; Morpurgo, A. F. Tuning Magnetotransport In A Compensated Semimetal At The Atomic Scale Nat. Commun. 2015, 6, 8892 10.1038/ncomms9892
20. 2 Excitonic Dynamics by Defects-Activated Molecular Interaction ACS Nano 2015, 9, 5326-5332 10.1021/acsnano.5b00985
21. Tao, J.; Cheung, N. W.; Hu, C. M. Electromigration Characteristics of Copper Interconnects IEEE Electron Device Lett. 1993, 14, 249-251 10.1109/55.215183
22. Filippi, R. G.; Wang, P. C.; Brendler, A.; McLaughlin, P. S.; Poulin, J.; Redder, B.; Lloyd, J. R.; Demarest, J. J. The Effect Of A Threshold Failure Time And Bimodal Behavior On The Electromigration Lifetime Of Copper Interconnects 2009 IEEE Int. Reliab. Phys. Symp. Proc. 2009, 444-451 10.1109/IRPS.2009.5173295
23. Chen, X. Y.; Seo, D. H.; Seo, S.; Chung, H.; Wong, H. S. P. Graphene Interconnect Lifetime: A Reliability Analysis IEEE Electron Device Lett. 2012, 33, 1604-1606 10.1109/LED.2012.2211564
24. 2 Small 2013, 9, 1974-1981 10.1002/smll.201202919
25. 2 Nano Lett. 2015, 15, 2067-2073 10.1021/nl5049753
26. Wood, J. D.; Wells, S. A.; Jariwala, D.; Chen, K.-S.; Cho, E.; Sangwan, V. K.; Liu, X.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation Nano Lett. 2014, 14, 6964-6970 10.1021/nl5032293
27. Kim, J.-S.; Liu, Y.; Zhu, W.; Kim, S.; Wu, D.; Tao, L.; Dodabalapur, A.; Lai, K.; Akinwande, D. Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors Sci. Rep. 2015, 5, 8989 10.1038/srep08989
28. Bahl, M. K.; Watson, R. L.; Irgolic, K. J. X-Ray Photoemission Studies of Tellurium and Some of its Compounds J. Chem. Phys. 1977, 66, 5526-5535 10.1063/1.433874
29. xTe J. Vac. Sci. Technol. 1980, 17, 1067-1073 10.1116/1.570592
30. McGuire, G. E.; Schweitzer, G. K.; Carlson, T. A. Study of Core Electron Binding-Energies in Some Group IIIA, VB, and VIB Compounds Inorg. Chem. 1973, 12, 2450-2453 10.1021/ic50128a045
31. Salvati, L.; Makovsky, L. E.; Stencel, J. M.; Brown, F. R.; Hercules, D. M. Surface Spectroscopic Study of Tungsten-Alumina Catalysts Using X-Ray Photo-Electron, Ion-Scattering, and Raman Spectroscopies J. Phys. Chem. 1981, 85, 3700-3707 10.1021/j150624a035
32. 3 Thin Solid Films 1994, 245, 180-185 10.1016/0040-6090(94)90896-6
33. Lang, O.; Schlaf, R.; Tomm, Y.; Pettenkofer, C.; Jaegermann, W. Single-Crystalline GaSe/WSe2 Heterointerfaces Grown by Van-Der-Waals Epitaxy 0.1. Growth-Conditions J. Appl. Phys. 1994, 75, 7805-7813 10.1063/1.356562
34. 2 J. Phys. Soc. Jpn. 1966, 21, 945-948 10.1143/JPSJ.21.945
35. 2 Surfaces in UHV-STM Image Formation and Analysis of Point Defect Structures Surf. Sci. 1997, 380, 568-575 10.1016/S0039-6028(97)00046-0
36. 2 Phys. Rev. Lett. 2015, 114, 176601 10.1103/PhysRevLett.114.176601
37. 2 Phys. Rev. Lett. 2015, 115, 046602 10.1103/PhysRevLett.115.046602
38. 2 Nat. Nanotechnol. 2015, 10, 270-276 10.1038/nnano.2014.323
39. 2 Nano Lett. 2015, 15, 1861-1866 10.1021/nl504662b
40. 2 Transistors by Ultra-High Vacuum Metal Deposition Nano Lett. 2016, 16, 3824-3830 10.1021/acs.nanolett.6b01309
41. Allain, A.; Kang, J.; Banerjee, K.; Kis, A. Electrical Contacts to Two-Dimensional Semiconductors Nat. Mater. 2015, 14, 1195-1205 10.1038/nmat4452
42. Sui, Y.; Appenzeller, J. Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors Nano Lett. 2009, 9, 2973-2977 10.1021/nl901396g
43. Das, S.; Appenzeller, J. Where Does the Current Flow in Two-Dimensional Layered Systems? Nano Lett. 2013, 13, 3396-3402 10.1021/nl401831u
44. Behnam, A.; Lyons, A. S.; Bae, M.-H.; Chow, E. K.; Islam, S.; Neumann, C. M.; Pop, E. Transport In Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition Nano Lett. 2012, 12, 4424-4430 10.1021/nl300584r
45. 2 Appl. Phys. Lett. 2010, 97, 082112 10.1063/1.3483130
46. Liao, A. D.; Wu, J. Z.; Wang, X.; Tahy, K.; Jena, D.; Dai, H.; Pop, E. Thermally Limited Current Carrying Ability of Graphene Nanoribbons Phys. Rev. Lett. 2011, 106, 256801 10.1103/PhysRevLett.106.256801
47. Pop, E.; Varshney, V.; Roy, A. K. Thermal Properties of Graphene: Fundamentals and Applications MRS Bull. 2012, 37, 1273-1281 10.1557/mrs.2012.203
48. Pop, E. The Role of Electrical and Thermal Contact Resistance for Joule Breakdown of Single-Wall Carbon Nanotubes Nanotechnology 2008, 19, 295202 10.1088/0957-4484/19/29/295202
49. Dyke, W. P.; Barbour, J. P.; Martin, E. E.; Trolan, J. K. T-F Emission-Experimental Measurement of the Average Electron Current Density from Tungsten Phys. Rev. 1955, 99, 1192-1195 10.1103/PhysRev.99.1192
50. Tao, J.; Young, K. K.; Pico, C. A.; Cheung, N. W.; Hu, C. M. Electromigration Characteristics of Tungsten Plug Vias under Pulse and Bidirectional Current Stressing IEEE Electron Device Lett. 1991, 12, 646-648 10.1109/55.116942
51. Ames, I.; d'Heurle, F. M.; Horstmann, Re. Reduction of Electromigration in Aluminum Films by Copper Doping IBM J. Res. Dev. 1970, 14, 461-463 10.1147/rd.144.0461
52. 2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density ACS Nano 2014, 8, 9137-9142 10.1021/nn5027164
53. Lide, D. R. Handbook of Chemistry and Physics, 87 th ed.; CRC Press: Boca Raton, FL, 1988.
54. Stark, I.; Stordeur, M.; Syrowatka, F. Thermal-Conductivity of Thin Amorphous Alumina Films Thin Solid Films 1993, 226, 185-190 10.1016/0040-6090(93)90227-G
55. 3 Thin Films Grown by Low Temperature ALD Adv. Eng. Mater. 2013, 15, 1046-1050 10.1002/adem.201300132
56. 2 New J. Phys. 2016, 18, 033017 10.1088/1367-2630/18/3/033017
57. Koh, Y. K.; Bae, M. H.; Cahill, D. G.; Pop, E. Heat Conduction Across Monolayer and Few-Layer Graphenes Nano Lett. 2010, 10, 4363-4368 10.1021/nl101790k
58. Behnam, A.; Xiong, F.; Cappelli, A.; Wang, N. C.; Carrion, E. A.; Hong, S.; Dai, Y.; Lyons, A. S.; Chow, E. K.; Piccinini, E.; Jacoboni, C.; Pop, E. Nanoscale Phase Change Memory with Graphene Ribbon Electrodes Appl. Phys. Lett. 2015, 107, 123508 10.1063/1.4931491
59. Raoux, S.; Xiong, F.; Wuttig, M.; Pop, E. Phase Change Materials and Phase Change Memory MRS Bull. 2014, 39, 703-710 10.1557/mrs.2014.139
60. Qian, X. F.; Liu, J. W.; Fu, L.; Li, J. Quantum Spin Hall Effect in Two-Dimensional Transition Metal Dichalcogenides Science 2014, 346, 1344-1347 10.1126/science.1256815
61. 2/Ferromagnet Bilayers. arXiv:1605.02712, 2016.