Gate-tunable phase transitions in thin flakes of 1T-TaS2

Nature Nanotechnology

Volumn 10, Issue 3, 2015, Pages 270-276

  Yu, Yijun ^a,b   Yang, Fangyuan ^a,b   Lu, Xiu Fang ^b,c,d   Yan, Ya Jun ^a,b,c   Cho, Yong Heum ^e   Ma, Liguo ^a,b   Niu, Xiaohai ^a,b   Kim, Sejoong ^f   Son, Young Woo ^f   Feng, Donglai ^a,b   Li, Shiyan ^a,b   Cheong, Sang Wook ^e,g   Chen, Xian Hui ^b,c,d   Zhang, Yuanbo ^a,b  

^a FUDAN UNIVERSITY   (China)

^b School of Electronic Science and Engineering   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e Pohang University of Science and Technology (POSTECH)   (South Korea)

^f Korea Institute for Advanced Study   (South Korea)

^g RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE DENSITY; CHARGE DENSITY WAVES; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; MOTT INSULATORS; SEMICONDUCTOR INSULATOR BOUNDARIES; TEXTURES;

CHARGE DENSITY WAVE STATE; CHARGE ORDERED STATE; CRITICAL THICKNESS; ELECTRIC FIELD INDUCED; ELECTRONIC TECHNOLOGIES; INSULATOR TO METAL; ORDERS OF MAGNITUDE; TWO-DIMENSIONAL SYSTEMS;

METAL INSULATOR TRANSITION;

LITHIUM ION;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; ELECTRIC RESISTANCE; ENERGY TRANSFER; FIELD EFFECT TRANSISTOR; LOW TEMPERATURE; MODULATION; PHASE TRANSITION; PRIORITY JOURNAL; QUANTUM MECHANICS; ROOM TEMPERATURE; SURFACE CHARGE; THICKNESS;

EID: 84924663796     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.323     Document Type: Article

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