Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

Applied Physics Letters

Volumn 109, Issue 5, 2016, Pages

  Zhang, Xinyu ^a   Wan, Yimao ^a   Bullock, James ^a   Allen, Thomas ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER OXIDES; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTRIC CONTACTORS; NITROGEN; OHMIC CONTACTS; REACTIVE SPUTTERING; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTACT RESISTIVITIES; CONTACT STRUCTURE; CRYSTALLINE SILICONS; DEVICE FABRICATIONS; RAMAN SPECTROSCOPY MEASUREMENTS; SELECTIVE CONTACTS; STRUCTURAL AND PHYSICAL PROPERTIES; SUBSTRATE TEMPERATURE;

OXIDE FILMS;

EID: 84981206946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4960529     Document Type: Article

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