Crystallization and electrical resistivity of Cu 2O and CuO obtained by thermal oxidation of Cu thin films on SiO 2/Si substrates

Thin Solid Films

Volumn 520, Issue 20, 2012, Pages 6368-6374

  De Los Santos Valladares, L ^a,b,c   Salinas, D Hurtado ^b,d   Dominguez, A Bustamante ^d   Najarro, D Acosta ^e   Khondaker, S I ^f   Mitrelias, T ^a   Barnes, C H W ^a   Aguiar, J Albino ^c   Majima, Y ^b,g  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

^d UNIVERSIDAD NACIONAL MAYOR DE SAN MARCOS   (Peru)

^e UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^f UNIVERSITY OF CENTRAL FLORIDA   (United States)

^g JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Annealing; Cupric oxide; Cuprous oxide; Evaporation; Thermal oxidation; Thin films; X ray diffraction

Indexed keywords

ANNEALING TEMPERATURES; CU THIN FILM; CUPRIC OXIDE; CUPROUS OXIDE; CURRENT-VOLTAGE RESPONSE; ELECTRICAL RESISTIVITY; EX-SITU ANNEALING; PHASE EVOLUTIONS; STRUCTURAL SURFACES; TEMPERATURE INCREASE; TEMPERATURE RANGE; THERMAL OXIDATION; X-RAY DIFFRACTOGRAMS;

ANNEALING; ELECTRIC CONDUCTIVITY; EVAPORATION; OXIDATION; PHASE DIAGRAMS; SILICON; THERMAL EVAPORATION; THIN FILMS; X RAY DIFFRACTION;

COPPER;

EID: 84863982281     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.06.043     Document Type: Article

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