A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Volumn , Issue , 2002, Pages 61-62

  Ha, Wonill ^a   Gambin, V ^a   Bank, S ^a   Wistey, M ^a   Yuen, H ^a   Goddard, L ^a   Kim, Seongsin ^a   Harris, J ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS;

ACTIVE LAYER; BANDWIDTH DEMAND; BOWING PARAMETERS; GAINNAS; INDIUM CONCENTRATION; PL INTENSITY;

GALLIUM NITRIDE;

EID: 84968527943     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MBE.2002.1037759     Document Type: Conference Paper

References (7)

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2. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai and K. Uomi, "GaInNAs: A novel material for long wavelength semiconductor lasers," IEEE J.Select. Topics Quantum Electron., 3, 719, (1997)
3. S. Sato, Y.Osawa, T. Saitoh, and I. Fujimura, "Room-temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode," Electro. Lett., 33, 1386, July (1997)
4. C. Coldren, M. Larson, S, Spruytte, J. Harris, "1200 nm GaAs-based vertical cavity lasers employing GaInNAs multi-quantum well active regions", Elect. Lett., vol. 36, no. 11, p. 951-952, May 2000
5. A. Ramakrishnan, G. Steinle, D. Supper, C. Degen, G. Ebbinghaus, "Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region," Electr. Lett., vol. 38, no. 7, p. 322-324, Mar. 2002
6. H. Shimizu, K. Kumada, S. Uchiyana, A. Kasukawa, "High-performance CW 1.26 μm GaInNAsSb-SQW ridge lasers," Select. Topics in Quant. Electr., vol. 7, no. 2, p. 355-364, Mar. 2001
7. W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim, J. Harris, "Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers," Elect. Lett. Vol. 38, no. 6, p. 277-278, Mar.2002