Characterization of a 0.1 μm MOSFET using cross-sectional scanning tunneling microscopy

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 59-60

  Okui, T ^a   Hasegawa, S ^a   Nakashima, H ^a   Fukutome, H ^a   Arimoto, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); ION IMPLANTATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

THIN GATE OXIDES;

MOSFET DEVICES;

EID: 0034874071     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)