Raman Signatures of Polytypism in Molybdenum Disulfide

ACS Nano

Volumn 10, Issue 2, 2016, Pages 1948-1953

  Lee, Jae Ung ^a   Kim, Kangwon ^a   Han, Songhee ^a   Ryu, Gyeong Hee ^b   Lee, Zonghoon ^b   Cheong, Hyeonsik ^a  

^a Sogang University   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

Author keywords

3R stacking; HR TEM; molybdenum disulfide; MoS2; Raman spectroscopy

Indexed keywords

MATERIALS PROPERTIES; MOLYBDENUM COMPOUNDS; POLYMORPHISM; RAMAN SPECTROSCOPY; SULFUR COMPOUNDS;

3R STACKING; DEVICE APPLICATION; HIGH FREQUENCY HF; LAYERED MATERIAL; MOLYBDENUM DISULFIDE; RAMAN SIGNATURES; RESONANT EXCITATION; STACKING SEQUENCE;

MOLYBDENUM;

EID: 84960171591     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b05831     Document Type: Article

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