Electronic structure study of the CdS buffer layer in CIGS solar cells by X-ray absorption spectroscopy: Experiment and theory

Solar Energy Materials and Solar Cells

Volumn 149, Issue , 2016, Pages 275-283

  Schwartz, Craig ^a,b   Nordlund, Dennis ^a   Weng, Tsu Chien ^a,c   Sokaras, Dimosthenis ^a   Mansfield, Lorelle ^d   Krishnapriyan, Aditi S ^a   Ramanathan, Kannan ^d   Hurst, Katherine E ^d   Prendergast, David ^b   Christensen, Steven T ^d  

^a SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c CENTER FOR HIGH PRESSURE SCIENCE AND TECHNOLOGY ADVANCED RESEARCH   (China)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

CdS; CIGS; NEXAFS; Sulfur K edge; XANES; XAS

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; BUFFER LAYERS; CADMIUM SULFIDE; DEFECTS; DEPOSITION; ELECTRONIC STRUCTURE; FILM GROWTH; POINT DEFECTS; SINGLE CRYSTALS; SOLAR CELLS; SULFUR; X RAY ABSORPTION SPECTROSCOPY;

ATOMIC SUBSTITUTIONS; CHEMICAL-BATH DEPOSITION; CIGS; LOCAL ATOMIC STRUCTURES; NEXAFS; STRUCTURE MODIFICATION; SULFUR K-EDGE; XANES;

CRYSTAL ATOMIC STRUCTURE;

EID: 84958181174     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2016.01.043     Document Type: Article

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