Electrical control of the valley Hall effect in bilayer MoS 2 transistors

Nature Nanotechnology

Volumn 11, Issue 5, 2016, Pages 421-425

  Lee, Jieun ^a   Mak, Kin Fai ^a   Shan, Jie ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELDS; HALL EFFECT; MONOLAYERS; POLARIZATION; THRESHOLD VOLTAGE; TRANSISTORS; TRANSITION METALS;

ELECTRICAL CURRENT; EXPERIMENTAL DEMONSTRATIONS; INFORMATION CARRIERS; INVERSION SYMMETRY; NON-CENTROSYMMETRIC CRYSTALS; OPTICAL ORIENTATION; OPTOELECTRONIC APPLICATIONS; TWO-DIMENSIONAL SEMICONDUCTORS;

LANDFORMS;

CHALCOGEN; DICHALCOGENIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; TRANSITION ELEMENT; UNCLASSIFIED DRUG;

ARTICLE; BILAYER MEMBRANE; CONDUCTANCE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRONICS; MICROSCOPY; POLARIZATION; PRIORITY JOURNAL; ROTATION; SEMICONDUCTOR; TRANSISTOR; VALLEY HALL CONDUCTIVITY;

EID: 84955577546     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.337     Document Type: Article

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