Novel dielectric breakdown model of Hf-silicate with high temperature annealing

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 34-40

  Yamaguchi, Takeshi ^a   Ino, Tsunehiro ^a   Satake, Hideki ^a   Fukushima, Noburu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; HAFNIUM; RECONFIGURABLE HARDWARE; RELIABILITY; SILICATES;

AFTER HIGH TEMPERATURE; DIELECTRIC BREAKDOWN MODEL; FABRICATION PROCESS; HF SILICATE; HIGH- K GATE DIELECTRICS; HIGH-TEMPERATURE ANNEALING; RELIABILITY CHARACTERISTICS;

GATE DIELECTRICS;

EID: 84955303222     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197717     Document Type: Conference Paper

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