Mreliability and electric properties for PECVD A-SiNx:H films with an optical bandgap ranging from 2.5 to 5.38 eV

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 293-297

  Van Delden, M H W M ^a   Van Der Wel, P J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; DEGRADATION; ENERGY GAP; OPTICAL BAND GAPS; RELIABILITY; SILICON NITRIDE;

DEGRADATION MECHANISM; ELECTRICAL CHARACTERISTIC; SI DANGLING BONDS;

OPTICAL FILMS;

EID: 84955295916     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197760     Document Type: Conference Paper

References (34)

1. A.B.M. Jansman, J.T. M. van Beek, M.H.W.M. van Delden., A.L.A.M. Kemmeren and A. den Dekker, "Elimination of accumulation charge effects for High Resistive Silicon Substrates" accepted for publication in IMRS 2003.
2. B. Yeats, IEEE Trans. Elec. Dev. 45(4), 1998, pp. 939-946
3. 4-based Capacitors in GaAs MMICS" in Proc. Int. Reliab. Phys. Symp, 1999, pp.128-137.
4. H. Cramer, J. Oliver, G. Dix, M. Zimmerman, GaAs Mantech Proc., 1998, pp. 15-18.
5. D.L. Crook, "Method of determining reliability screens for time dependent dielectric break down" in Proc. Int. Reliab. Phys. Symp., 1979, p. 1.
6. D.R. Wolters and A.T.A. Zegers-van Duijnhoven, J. Vac. Sci. Technol. A5(4), 1987, pp. 1563-1568.
7. R. Degraeve, B. Kaczer, G. Groeseneken, Microeleironic. Reliability 39, 1999, pp. 1435-1460.
8. J. van Beek, M. van Delden, A. Jansman, A. Boogaard, A. Kemmeren, N. Pulsford, A. den Dekker, "The integration of RF passives using thin film technology on high-ohmic Si in combination with thick film interconnect" in SPIE proceedings series 4587, 2001, pp. 467-470.
9. M. de Samber, N. Pulsford, M. van Delden, R. Milson, "Lowcomplexity MCM-D Technology with Integrated Passives for High Frequency Applications" in IMAPS, 21, 1998, pp. 224-230.
10. J. Robertson, Mat. Res. Symp. Proc. 284, 1993, p. 65.
11. J. M. Shannon, J. N. Sandoe, J. D. French, and A. D. Annis, Mat. Res. Soc. Symp. 297, 1993, pp. 987-992.
12. J.M. Shannon, S.P. Lau, A.D. Annis and B.J. Sealy, Solid State Elec., 42, No. 1, 1998, pp. 91-99.
13. R. Swanepoel, J. Phys. E.: Sci. Instrum., 16, 1983, pp. 1214-1222.
14. W.E. Spear and P.O. Le Comber, Solid St. Commun., 17, 1975, p. 1193.
15. A. Iqbal. W.B. Jackson, C.C. Tsai, J.W. Allen, C.W. Bates, J. Appl. Phys. 61, 1997, p. 2947.
16. W.E. Spear, B. Dunnett, P.G. LeComber, Mat. Res. Soc. Symp. Proc. 95, 1987, p. 39.
17. J. Robertson and M.J. Powell, Appl. Phys. Lett. 44, 1984, p. 415.
18. S.Y. Ren and W.Y. Ching, Phys. Rev. B 23, 1981, p. 5454.
19. W.L. Warren, J. Kanicki, F.C. Fong and E.H. Pointdextcr, J. Electrochem. Soc. 139, 1992, p. 880.
20. J. Kanicki, W.L. Warren, C.H. Seager, M.S. Crowder, P.M. Lenahan. J. Non-Cryst. Solids 137, 1991, p. 291.
21. S. Hasegawa, M. Matsuda, and Y. Kurata, Appl. Phys. Lett. 58, 1991, p.741,
22. S.P. Lau, J.M. Shannon, B.J. Sealy and J.M. Marshall, Mat. Res. Soc. Symp. Proc. Vol. 507, 1998, pp. 655-660.
23. S.P. Lau and J.M. Shannon, J. Non. Cryst. Solids. 266-299, 2000, pp. 432-436.
24. J.M. Shannon, S.C. Deane, B. McGarvey and J.N. Sandoe, Appl. Phys. Lett. 65 (23), 1994, pp. 2978-2980.
25. R.A. Street, Appl. Phys. Lett. 59, 1991, p. 1084.
26. J. Robertson, Phil. Mag. B. 44, 1981, p. 215.
27. E. Martinez and F. Yndurain, Phys. Rev. B. 24, 1983, p. 5718.
28. R.A. Street and K. Winer, Phys. Rev. B 40, 1989, p. 6236.
29. R. A. Street, Phys. Rev. B 44, 1991, p. 10610
30. J. Robertson, Phil. Mag. B, 63, 1991, pp. 47-77.
31. D. Jousse, J. Kanicki, D.T. Krick, P.M. Lenahan, App. Phys. Lett. 52, 1988, p. 445.
32. E.D. Tober, J. Kanicki, M.S. Crowder, App. Phys Lett. 57, 1990, p. 1995.
33. S.P. Lau, J.M. Shannon and B.J. Sealy, J. Non-Cryst. Solids, 277, 1998, p. 533.
34. R.A.C. M.M. van Swaaij, A.D. Annis, B.J. Sealy and J.M. Shannon, J. Appl. Phys. 82(10), 1997, p. 4800.